公开(公告)号：US09915707B2

公开(公告)日：2018-03-13

申请号：US15433524

申请日：2017-02-15

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Klemens Pruegl ,  Olaf Kuehn ,  Andreas Strasser ,  Ralf-Rainer Schledz ,  Norbert Thyssen

IPC: H01L21/00 ,  G01R33/00 ,  G01R33/09 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

CPC classification number: G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/096 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

公开(公告)号：US20150355295A1

公开(公告)日：2015-12-10

申请号：US14830195

申请日：2015-08-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Juergen Zimmer ,  Klemens Pruegl ,  Olaf Kuehn ,  Andreas Strasser ,  Ralf-Rainer Schledz ,  Norbert Thyssen

IPC: G01R33/09 ,  H01L43/12

CPC classification number: G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/096 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract translation: 实施例涉及具有非常高的形状各向异性的xMR传感器。 实施例还涉及xMR堆叠的新结构化过程，以实现非常高的形状各向异性，而不会在性能相关的磁场敏感层系统中产生化学影响，同时在晶片上提供相对均匀的结构宽度，在实施例中可降低至约100nm。 实施例还可以提供具有性能相关自由层系统的侧壁的xMR堆叠，其平滑和/或限定的横向几何形状对于在晶片上实现均匀的磁性行为是重要的。

公开(公告)号：US09606197B2

公开(公告)日：2017-03-28

申请号：US14830195

申请日：2015-08-19

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Klemens Pruegl ,  Olaf Kuehn ,  Andreas Strasser ,  Ralf-Rainer Schledz ,  Norbert Thyssen

IPC: H01L21/00 ,  G01R33/09 ,  H01L43/08 ,  H01L43/12

CPC classification number: G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/096 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

公开(公告)号：US20170160350A1

公开(公告)日：2017-06-08

申请号：US15433524

申请日：2017-02-15

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Klemens Pruegl ,  Olaf Kuehn ,  Andreas Strasser ,  Ralf-Rainer Schledz ,  Norbert Thyssen

IPC: G01R33/00 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G01R33/09 ,  H01L43/12

CPC classification number: G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/096 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.