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公开(公告)号：US12068296B2
公开(公告)日：2024-08-20
申请号：US17583545
申请日：2022-01-25
Applicant: Infineon Technologies AG
Inventor： Stefan Hampl , Marco Haubold , Kerstin Kaemmer , Norbert Thyssen
CPC classification number: H01L25/167 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/29124 , H01L2224/32145 , H01L2224/83805 , H01L2924/01032 , H01L2924/01322
Abstract: A method for wafer bonding includes: providing a semiconductor wafer having a first main face; fabricating at least one semiconductor device in the semiconductor wafer, wherein the semiconductor device is arranged at the first main face; generating trenches and a cavity in the semiconductor wafer such that the at least one semiconductor device is connected to the rest of the semiconductor wafer by no more than at least one connecting pillar; arranging the semiconductor wafer on a carrier wafer such that the first main face faces the carrier wafer; attaching the at least one semiconductor device to the carrier wafer; and removing the at least one semiconductor device from the semiconductor wafer by breaking the at least one connecting pillar.
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公开(公告)号：US20190027399A1
公开(公告)日：2019-01-24
申请号：US16029237
申请日：2018-07-06
Applicant: Infineon Technologies AG
Inventor： Ines Uhlig , Kerstin Kaemmer , Norbert Thyssen
IPC: H01L21/762 , H01L21/306
Abstract: In accordance with an embodiment, a method for producing a buried cavity structure includes providing a mono-crystalline semiconductor substrate, producing a doped volume region in the mono-crystalline semiconductor substrate, wherein the doped volume region has an increased etching rate for a first etchant by comparison with an adjoining, undoped or more lightly doped material of the monocrystalline semiconductor substrate, forming an access opening to the doped volume region, and removing the doped semiconductor material in the doped volume region using the first etchant through the access opening to obtain the buried cavity structure.
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公开(公告)号：US10784147B2
公开(公告)日：2020-09-22
申请号：US16029237
申请日：2018-07-06
Applicant: Infineon Technologies AG
Inventor： Ines Uhlig , Kerstin Kaemmer , Norbert Thyssen
IPC: H01L21/762 , H01L21/768 , H01L21/3105 , H01L21/306 , H01L21/3065
Abstract: In accordance with an embodiment, a method for producing a buried cavity structure includes providing a mono-crystalline semiconductor substrate, producing a doped volume region in the mono-crystalline semiconductor substrate, wherein the doped volume region has an increased etching rate for a first etchant by comparison with an adjoining, undoped or more lightly doped material of the monocrystalline semiconductor substrate, forming an access opening to the doped volume region, and removing the doped semiconductor material in the doped volume region using the first etchant through the access opening to obtain the buried cavity structure.
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公开(公告)号：US09606197B2
公开(公告)日：2017-03-28
申请号：US14830195
申请日：2015-08-19
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Klemens Pruegl , Olaf Kuehn , Andreas Strasser , Ralf-Rainer Schledz , Norbert Thyssen
CPC classification number: G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
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Patent Agency Ranking
公开(公告)号：US20220238501A1
公开(公告)日：2022-07-28
申请号：US17583545
申请日：2022-01-25
Applicant: Infineon Technologies AG
Inventor： Stefan Hampl , Marco Haubold , Kerstin Kaemmer , Norbert Thyssen
Abstract: A method for wafer bonding includes: providing a semiconductor wafer having a first main face; fabricating at least one semiconductor device in the semiconductor wafer, wherein the semiconductor device is arranged at the first main face; generating trenches and a cavity in the semiconductor wafer such that the at least one semiconductor device is connected to the rest of the semiconductor wafer by no more than at least one connecting pillar; arranging the semiconductor wafer on a carrier wafer such that the first main face faces the carrier wafer; attaching the at least one semiconductor device to the carrier wafer; and removing the at least one semiconductor device from the semiconductor wafer by breaking the at least one connecting pillar.
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公开(公告)号：US09915707B2
公开(公告)日：2018-03-13
申请号：US15433524
申请日：2017-02-15
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Klemens Pruegl , Olaf Kuehn , Andreas Strasser , Ralf-Rainer Schledz , Norbert Thyssen
CPC classification number: G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
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公开(公告)号：US20150355295A1
公开(公告)日：2015-12-10
申请号：US14830195
申请日：2015-08-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Juergen Zimmer , Klemens Pruegl , Olaf Kuehn , Andreas Strasser , Ralf-Rainer Schledz , Norbert Thyssen
CPC classification number: G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
Abstract translation: 实施例涉及具有非常高的形状各向异性的xMR传感器。 实施例还涉及xMR堆叠的新结构化过程，以实现非常高的形状各向异性，而不会在性能相关的磁场敏感层系统中产生化学影响，同时在晶片上提供相对均匀的结构宽度，在实施例中可降低至约100nm。 实施例还可以提供具有性能相关自由层系统的侧壁的xMR堆叠，其平滑和/或限定的横向几何形状对于在晶片上实现均匀的磁性行为是重要的。
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公开(公告)号：US12154921B2
公开(公告)日：2024-11-26
申请号：US17398147
申请日：2021-08-10
Applicant: Infineon Technologies AG
Inventor： Ines Uhlig , Kerstin Kaemmer , Dirk Offenberg , Norbert Thyssen
IPC: H01L27/146 , G02B5/04 , G03B30/00
Abstract: A device for an image sensor is provided. The device includes a semiconductor device having a photo-sensitive region and a metallization stack for electrically contacting the photo-sensitive region. The photo-sensitive region is configured to generate an electric signal based on incident light. Further, the device includes an optical stack formed on a surface of the semiconductor device and configured to guide the incident light towards the photo-sensitive region. The optical stack includes a plurality of regions stacked on top of each other. The plurality of regions includes a filter region configured to selectively transmit the incident light only in a target wavelength range.
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公开(公告)号：US20170160350A1
公开(公告)日：2017-06-08
申请号：US15433524
申请日：2017-02-15
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Klemens Pruegl , Olaf Kuehn , Andreas Strasser , Ralf-Rainer Schledz , Norbert Thyssen
CPC classification number: G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
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