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公开(公告)号：US12021121B2
公开(公告)日：2024-06-25
申请号：US17042183
申请日：2020-07-16
发明人： Han-Chin Chiu
IPC分类号： H01L29/40 , H01L29/20 , H01L29/66 , H01L29/778
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/66462 , H01L29/7786 , H01L29/7787
摘要： Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure and a conductive layer. The substrate has a first surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer. The conductive layer is disposed on the second nitride semiconductor layer. The conductive layer has a first length extending in a first direction substantially parallel to the first surface of the substrate, a second length extending in a second direction substantially perpendicular to the first direction—from a cross section view perspective—wherein the second length is greater than the first length.
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公开(公告)号：US11367706B2
公开(公告)日：2022-06-21
申请号：US16921963
申请日：2020-07-07
发明人： Han-Chin Chiu
摘要： A semiconductor apparatus and a fabrication method thereof are disclosed. The semiconductor apparatus includes a substrate, a channel layer, a barrier layer, and a gate structure, and includes: a first doped group III-V semiconductor, a group III-V semiconductor, and a conductor. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The first doped group III-V semiconductor is disposed on the barrier layer. The group III-V semiconductor is disposed on the doped group III-V semiconductor. The conductor is disposed on the group III-V semiconductor, where a width of the first doped group III-V semiconductor is greater than a width of the conductor.
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公开(公告)号：US11776934B2
公开(公告)日：2023-10-03
申请号：US17750424
申请日：2022-05-23
发明人： Han-Chin Chiu
CPC分类号： H01L25/043 , H01L29/0847 , H01L29/66477
摘要： A semiconductor apparatus includes a channel layer, a barrier layer, a source contact and a drain contact, a first doped group III-V semiconductor, a group III-V semiconductor, and a second doped group III-V semiconductor. The barrier layer is disposed on the channel layer. The source contact and the drain contact are disposed on the channel layer. The first doped group III-V semiconductor is disposed on the barrier layer. The group III-V semiconductor is disposed on the first doped group III-V semiconductor and between the source contact and the drain contact. The second doped group III-V semiconductor is disposed on the group III-V semiconductor and between the source contact and the drain contact. The group III-V semiconductor has a central region covered by the second doped group III-V semiconductor and a peripheral region free from coverage by the second doped group III-V semiconductor.
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公开(公告)号：US12068373B2
公开(公告)日：2024-08-20
申请号：US17042915
申请日：2020-08-07
发明人： Han-Chin Chiu
IPC分类号： H01L29/10 , H01L29/04 , H01L29/20 , H01L29/66 , H01L29/778
CPC分类号： H01L29/1029 , H01L29/045 , H01L29/2003 , H01L29/66462 , H01L29/7786
摘要： The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate and a second nitride semiconductor layer on the first nitride semiconductor layer. The second nitride semiconductor layer has a first area and a second area, and the second nitride semiconductor layer has single crystals. The semiconductor device includes an electrode in contact with the first area. A first concentration of Aluminum (Al) of the first area is less than a second concentration of Al of the second area, and the single crystals in the first area take over a crystal structure of the first nitride semiconductor layer.
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公开(公告)号：US11784237B2
公开(公告)日：2023-10-10
申请号：US17048619
申请日：2019-12-20
发明人： Kingyuen Wong , Han-Chin Chiu , Ming-Hong Chang , Chunhua Zhou , Jinhan Zhang
IPC分类号： H01L29/66 , H01L29/20 , H01L29/10 , H01L29/778
CPC分类号： H01L29/66462 , H01L29/1029 , H01L29/2003 , H01L29/7786 , H01L2924/13064
摘要： A semiconductor device includes a substrate, a channel layer, a barrier layer, a gate, a strained layer and a passivation layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The gate is disposed on the barrier layer. The strained layer is disposed on the barrier layer. The passivation layer covers the gate and the strained layer. The material of the passivation layer differs from that of the strained layer.
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公开(公告)号：US11563097B2
公开(公告)日：2023-01-24
申请号：US16955091
申请日：2019-12-27
发明人： Ming-Hong Chang , Kingyuen Wong , Han-Chin Chiu , Hang Liao
IPC分类号： H01L29/778 , H01L29/66 , H01L29/423 , H01L21/285 , H01L21/3213 , H01L29/20 , H01L29/205
摘要： The present disclosure relates to a high electron mobility transistor (HEMT) and a fabrication method thereof. The HEMT may include a substrate; a channel layer disposed on the substrate; a barrier layer disposed on the channel layer; a semiconductor gate disposed on the barrier layer; a metal gate disposed on the semiconductor gate, the metal gate having a trapezoidal cross-sectional shape; and a passivation layer directly contacting the metal gate. A first surface of the metal gate contacts a first surface of the semiconductor gate, and an edge of the first surface of the metal gate is located inside an edge of the first surface of the semiconductor gate.
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