公开(公告)号：US09580332B2

公开(公告)日：2017-02-28

申请号：US13922952

申请日：2013-06-20

Applicant: INSTITUTO MEXICANO DEL PETROLEO

Inventor： Salvador Castillo Cervantes ,  Isidro Mejia Centeno ,  Roberto Camposeco Solis ,  Florencia Marina Moran Pineda ,  Juan Navarrete Bolanos ,  J. Ascension Montoya De La Fuente ,  Alfredo Vargas Escudero

IPC: C01G23/053 ,  B01J21/06

CPC classification number: C01G23/053 ,  B01J21/063 ,  B01J35/02 ,  B01J37/036 ,  B01J37/08 ,  C01G23/08 ,  C01P2002/02 ,  C01P2002/60 ,  C01P2006/12 ,  C01P2006/16 ,  C01P2006/40

Abstract: A nanostructured titania semiconductor material termed TSG-IMP having a predetermined crystal size is produced by a sol-gel method by adding a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, subjecting the acidic solution to agitation under reflux conditions; stabilizing the medium and adding bidistilled water under reflux until gelation; subjecting the gel to aging until complete formation of the titania which is dried and calcined.

Abstract translation: 通过在醇溶液中加入钛醇盐，向醇溶液中加入酸，使酸性溶液在回流条件下搅拌，通过溶胶 - 凝胶法制备称为TSG-IMP的纳米结构二氧化钛半导体材料。 稳定培养基并加入双蒸水回流至凝胶化; 使凝胶老化直至二氧化钛完全干燥并煅烧。

公开(公告)号：US11498847B2

公开(公告)日：2022-11-15

申请号：US16640454

申请日：2018-07-27

Applicant: Instituto Mexicano del Petroleo

Inventor： Patricia Perez Romo ,  Candido Aguilar Barrera ,  Juan Navarrete Bolanos ,  Santos Glorindo Reyes Robles

IPC: C01F7/00 ,  C01F7/46 ,  B01J21/04 ,  B01J21/20 ,  B01J38/02 ,  B01J38/52

Abstract: The present disclosure is directed to a non-destructive process for removing metals, metal ions and metal oxides in alumina-based materials without destroying alumina, allowing the regeneration of alumina-based catalysts. The non-destructive process uses an extracting agent that sequesters metals, metal ions and/or metal oxides present in alumina-based materials without destroying the alumina, allowing the regeneration of alumina-based catalysts.

公开(公告)号：US10017397B2

公开(公告)日：2018-07-10

申请号：US15399052

申请日：2017-01-05

Applicant: INSTITUTO MEXICANO DEL PETROLEO

Inventor： Salvador Castillo Cervantes ,  Isidro Mejia Centeno ,  Roberto Camposeco Solis ,  Florencia Marina Moran Pineda ,  Juan Navarrete Bolanos ,  J. Ascension Montoya De La Fuente ,  Alfredo Vargas Escudero

IPC: C01G23/053 ,  B01J21/06 ,  B01J35/02 ,  B01J37/03 ,  B01J37/08 ,  C01G23/08

CPC classification number: C01G23/053 ,  B01J21/063 ,  B01J35/02 ,  B01J37/036 ,  B01J37/08 ,  C01G23/08 ,  C01P2002/02 ,  C01P2002/60 ,  C01P2006/12 ,  C01P2006/16 ,  C01P2006/40

Abstract: A semiconductor material basically consists of titanium oxide, with the special feature of being like nanostructures, which gives special physicochemical properties, with ability to disperse and stabilize metal particles with high activity and selectivity in catalytic processes mainly. The process of producing the semiconductor material includes adding a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, controlling the pH from 1 to 5; subjecting the acidic solution to agitation and reflux conditions at 70 to 80° C.; stabilizing the medium and adding bidistilled water in a water/alkoxide molar ratio of 1-2/0.100-0.150, continuing with reflux until gelation; aging the gel for 1 to 24 hours for complete formation of the titania; drying the titania nanostructured at of 50 to 80° C. for about 1 to 24 hours, and subjecting the dried titania to a calcination step at 200 to 600° C. for 1 to 12 hours.