公开(公告)号：US09613698B2

公开(公告)日：2017-04-04

申请号：US15154465

申请日：2016-05-13

Applicant: INTEL CORPORATION

Inventor： Davide Mantegazza ,  Kiran Pangal ,  Gerard H. Joyce ,  Prashant Damle ,  Derchang Kau ,  Davide Fugazza

IPC: G11C13/00

CPC classification number: G11C13/0097 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/0092

Abstract: Embodiments of the present disclosure describe techniques and configurations for word-line path isolation in a phase change memory (PCM) device. In an embodiment, a method includes increasing a current through a memory cell of a phase change memory (PCM) device, wherein the memory cell is coupled with a capacitor and subsequent to said increasing the current, generating a transient current through the memory cell by discharge of the capacitor to reset the memory cell. In another embodiment, a method includes increasing a current through a memory cell of a phase change memory (PCM) device and controlling the current to be greater than a threshold current and lower than a hold current of the memory cell to set the memory cell. Other embodiments may be described and/or claimed.

公开(公告)号：US20160254052A1

公开(公告)日：2016-09-01

申请号：US15154465

申请日：2016-05-13

Applicant: INTEL CORPORATION

Inventor： Davide Mantegazza ,  Kiran Pangal ,  Gerard H. Joyce ,  Prashant Damle ,  Derchang Kau ,  Davide Fugazza

IPC: G11C13/00

CPC classification number: G11C13/0097 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/0092

Abstract: Embodiments of the present disclosure describe techniques and configurations for word-line path isolation in a phase change memory (PCM) device. In an embodiment, a method includes increasing a current through a memory cell of a phase change memory (PCM) device, wherein the memory cell is coupled with a capacitor and subsequent to said increasing the current, generating a transient current through the memory cell by discharge of the capacitor to reset the memory cell. In another embodiment, a method includes increasing a current through a memory cell of a phase change memory (PCM) device and controlling the current to be greater than a threshold current and lower than a hold current of the memory cell to set the memory cell. Other embodiments may be described and/or claimed.

公开(公告)号：US09368205B2

公开(公告)日：2016-06-14

申请号：US14010417

申请日：2013-08-26

Applicant: INTEL CORPORATION

Inventor： Davide Mantegazza ,  Kiran Pangal ,  Gerard H. Joyce ,  Prashant Damle ,  Derchang Kau ,  Davide Fugazza

IPC: G11C13/00

CPC classification number: G11C13/0097 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/0092

Abstract: Embodiments of the present disclosure describe techniques and configurations for word-line path isolation in a phase change memory (PCM) device. In an embodiment, a method includes increasing a current through a memory cell of a phase change memory (PCM) device, wherein the memory cell is coupled with a capacitor and subsequent to said increasing the current, generating a transient current through the memory cell by discharge of the capacitor to reset the memory cell. In another embodiment, a method includes increasing a current through a memory cell of a phase change memory (PCM) device and controlling the current to be greater than a threshold current and lower than a hold current of the memory cell to set the memory cell. Other embodiments may be described and/or claimed.

Abstract translation: 本公开的实施例描述了在相变存储器（PCM）设备中的字线路径隔离的技术和配置。 在一个实施例中，一种方法包括增加通过相变存储器（PCM）器件的存储器单元的电流，其中存储器单元与电容器耦合，并且随后增加电流，产生通过存储器单元的瞬态电流，由 放电电容器来重置存储单元。 在另一个实施例中，一种方法包括增加通过相变存储器（PCM）器件的存储器单元的电流，并且控制电流大于阈值电流并且低于存储器单元的保持电流以设置存储器单元。 可以描述和/或要求保护其他实施例。