公开(公告)号：US20150311397A1

公开(公告)日：2015-10-29

申请号：US14259387

申请日：2014-04-23

Applicant: INTERMOLECULAR, INC.

Inventor： Jianhua Hu ,  Heng Kai Hsu ,  Tong Ju ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

IPC: H01L33/42 ,  H01L33/32

CPC classification number: H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/483 ,  H01L2933/0016

Abstract: Transparent ohmic contacts to p-GaN and other high-work-function (≧4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.

Abstract translation: 由锡酸锡（例如ZnSnO 3）制造对p-GaN和其它高功函数（≥4.2eV）的半导体的透明欧姆接触。 ZnO和SnO2可以从单独的靶溅射并退火以形成锡酸锌。 可以在1:2和2:1之间的范围内调整Zn：Sn比，以优化特定半导体和感兴趣的波长的带隙，功函数，电导率和透明度。 可以通过使锡酸锌结晶，通过掺入高达5重量％的Al或In或两者来改善电导率。

公开(公告)号：US20150318446A1

公开(公告)日：2015-11-05

申请号：US14265763

申请日：2014-04-30

Applicant: Intermolecular, Inc.

Inventor： Jianhua Hu ,  Heng Kai Hsu ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

IPC: H01L33/42 ,  H01L33/46 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/42 ,  H01L33/005 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0016

Abstract: A ternary transparent conductive oxide, indium zinc oxide (IZO), is formed as a thin film by co-sputtering zinc oxide with indium oxide at a deposition temperature between 25 and 200 C. Optionally, up to 1-2% Al may be added by various methods. The layers may be annealed at temperatures between 200 and 400 C. Measurements of IZO with 75-85 wt % In2O3 showed low resistivity and low visible absorbance, both of which were thermally stable up to 400 C.

Abstract translation: 通过在25-200℃的沉积温度下用氧化铟共溅射氧化锌，形成三元透明导电氧化物铟锌氧化物（IZO）作为薄膜。可选地，可以添加至多1-2％的Al 通过各种方法。 这些层可以在200-400℃的温度下退火。具有75-85wt％In2O3的IZO的测量显示低电阻率和低可见吸光度，两者都高达400℃是热稳定的。

公开(公告)号：US09246062B2

公开(公告)日：2016-01-26

申请号：US14259387

申请日：2014-04-23

Applicant: Intermolecular, Inc.

Inventor： Jianhua Hu ,  Heng Kai Hsu ,  Tong Ju ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

IPC: H01L21/00 ,  H01L33/42 ,  H01L33/32

CPC classification number: H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/483 ,  H01L2933/0016

Abstract: Transparent ohmic contacts to p-GaN and other high-work-function (≧4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.

Abstract translation: 由锡酸锡（例如ZnSnO 3）制造对p-GaN和其它高功函数（≥4.2eV）的半导体的透明欧姆接触。 ZnO和SnO2可以从单独的靶溅射并退火以形成锡酸锌。 可以在1:2和2:1之间的范围内调整Zn：Sn比，以优化特定半导体和感兴趣的波长的带隙，功函数，电导率和透明度。 可以通过使锡酸锌结晶，通过掺入高达5重量％的Al或In或两者来改善电导率。