公开(公告)号：US10982312B2

公开(公告)日：2021-04-20

申请号：US15312572

申请日：2015-03-23

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frederic Guernalec

IPC: C23C14/48 ,  C23C14/00 ,  C30B33/04 ,  G02B1/12 ,  G02B1/113 ,  G06F3/044 ,  C30B29/20 ,  G02B1/11 ,  G02B1/02 ,  C01F7/02 ,  C23C14/58

Abstract: A treatment method of a sapphire material, said method comprising bombardment of a surface of the sapphire material, said surface facing a medium different from the sapphire material, by a single- and/or multi-charged gas ion beam so as to produce an ion implanted layer in the sapphire material, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S). Use of said method to obtain a capacitive touch panel having a high transmission in the visible range.

公开(公告)号：US20180243726A1

公开(公告)日：2018-08-30

申请号：US15967475

申请日：2018-04-30

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frederic Guernalec

IPC: B01J23/10 ,  B01J37/34 ,  C01G25/00 ,  C04B35/50 ,  C01F17/00

Abstract: A method of treating a powder (P) made from cerium oxide using an ion beam (F) in which: —the powder is stirred once or a plurality of times; —the ions of the ion beam are selected from the ions of the elements of the list consisting of helium (He), boron (B), carbon (C), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe)—the acceleration voltage of the ions of the beam is between 10 kV and 1000 kV; —the treatment temperature of the powder (P) is less than or equal to Tf/3; —the ion dose per mass unit of powder to be treated is chosen from a range of between 1016 ions/g and 1022 ions/cm2 so as to lower the reduction temperature of the powder made from cerium oxide (P).

公开(公告)号：US20200043694A1

公开(公告)日：2020-02-06

申请号：US16485084

申请日：2018-02-12

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frédéric Guernalec

IPC: H01J37/08 ,  G02B1/113 ,  H01J37/317

Abstract: Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: the voltage for acceleration of the ions is between 10 kV and 100 kV; the implanted dose, expressed in ions/cm2, is between (5×1016)×(M/14)−1/2 and 1017×(M/14)−1/2, where M is the atomic mass of the ion; the rate of displacement VD, expressed in cm/s, is between 0.025×(P/D) and 0.1×(P/D), where P is the power of the beam, expressed in W (watts), and D is the diameter of the beam, expressed in cm (centimetres). A part made of sapphire having a high transmittance and which is resistant to scratching is thus advantageously obtained.

公开(公告)号：US11078113B2

公开(公告)日：2021-08-03

申请号：US15976686

申请日：2018-05-10

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frederic Guernalec

IPC: C03C23/00

Abstract: A method of treatment using a beam of singly- and multiply-charged gas ions produced by an electron cyclotron resonance (ECR) source of a glass material in which the ion acceleration voltage of between 5 kV and 1000 kV is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; and the ion dose per surface unit in a range of between 1012 ions/cm2 and 1018 ions/cm2 is chosen so as to create an atomic concentration of ions equal to 10% with a level of uncertainty of (+/−)5%. Advantageously this makes it possible to obtain materials made from glass that are non-reflective in the visible range.

公开(公告)号：US10923310B2

公开(公告)日：2021-02-16

申请号：US16485084

申请日：2018-02-12

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frédéric Guernalec

IPC: H01J37/08 ,  G02B1/113 ,  H01J37/317 ,  G06F3/041

Abstract: Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: the voltage for acceleration of the ions is between 10 kV and 100 kV; the implanted dose, expressed in ions/cm2, is between (5×1016)×(M/14)−1/2 and 1017×(M/14)−1/2, where M is the atomic mass of the ion; the rate of displacement VD, expressed in cm/s, is between 0.025×(P/D) and 0.1×(P/D), where P is the power of the beam, expressed in W (watts), and D is the diameter of the beam, expressed in cm (centimetres). A part made of sapphire having a high transmittance and which is resistant to scratching is thus advantageously obtained.

公开(公告)号：US10737242B2

公开(公告)日：2020-08-11

申请号：US15967475

申请日：2018-04-30

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frederic Guernalec

IPC: B01J23/10 ,  C04B35/50 ,  C01G25/00 ,  C01F17/206 ,  B01J37/34

Abstract: A method of treating a powder (P) made from cerium oxide using an ion beam (F) in which: —the powder is stirred once or a plurality of times; —the ions of the ion beam are selected from the ions of the elements of the list consisting of helium (He), boron (B), carbon (C), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe)—the acceleration voltage of the ions of the beam is between 10 kV and 1000 kV; —the treatment temperature of the powder (P) is less than or equal to Tf/3; —the ion dose per mass unit of powder to be treated is chosen from a range of between 1016 ions/g and 1022 ions/cm2 so as to lower the reduction temperature of the powder made from cerium oxide (P).

公开(公告)号：US20190352770A1

公开(公告)日：2019-11-21

申请号：US16482959

申请日：2018-02-02

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frédéric Guernalec

IPC: C23C14/48 ,  C23C14/58

Abstract: Method of antireflection and scratch-resistant treatment of a synthetic sapphire material where the acceleration voltage of the ions is between 5 kV and 1000 kV and is chosen in order to create an implanted layer having a thickness equal to a multiple of 100 nm; the microwave-induced annealing temperatures in the implanted surface are between 800° C. and 2000° C. with annealing times of between 1 and 1000 seconds. Synthetic sapphire materials are thus advantageously obtained where the reflection on the treated face is reduced by at least half while maintaining a hardness of greater than or equal to 8.

公开(公告)号：US20180265404A1

公开(公告)日：2018-09-20

申请号：US15976686

申请日：2018-05-10

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frederic Guernalec

IPC: C03C23/00

CPC classification number: C03C23/0055

Abstract: A method of treatment using a beam of singly- and multiply-charged gas ions produced by an electron cyclotron resonance (ECR) source of a glass material in which —the ion acceleration voltage of between 5 kV and 1000 kV is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; —the ion dose per surface unit in a range of between 1012 ions/cm2 and 1018 ions/cm2 is chosen so as to create an atomic concentration of ions equal to 10% with a level of uncertainty of (+/−)5%. Advantageously this makes it possible to obtain materials made from glass that is non-reflective in the visible range