公开(公告)号：USD976852S1

公开(公告)日：2023-01-31

申请号：US29738677

申请日：2020-06-18

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Designer： Sheng-Tsai Wu ,  Hsin-Han Lin ,  Yuan-Yin Lo ,  Kuo-Shu Kao ,  Tai-Jyun Yu ,  Han-Lin Wu ,  Yen-Ting Lin

公开(公告)号：US20230197578A1

公开(公告)日：2023-06-22

申请号：US17667558

申请日：2022-02-09

Applicant: Industrial Technology Research Institute

Inventor： Tai-Jyun Yu ,  Sheng-Tsai Wu ,  Kuo-Shu Kao ,  Han-Lin Wu ,  Tai-Kuang Lee ,  Jing-Yao Chang

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L23/49548 ,  H01L24/32 ,  H01L2224/32245 ,  H01L24/83 ,  H01L2224/83815

Abstract: A power semiconductor device, including a terminal base, is provided. The terminal base has a first end and a second end opposite to each other. The first end has a first flange expanding outward. The first flange is welded to a pad of a substrate by a solder. An included angle between an extension direction of the first flange and a length direction of the terminal base is greater than 90 degrees.