公开(公告)号：US20240177756A1

公开(公告)日：2024-05-30

申请号：US18146255

申请日：2022-12-23

Applicant: Industrial Technology Research Institute

Inventor： Hsin-Han LEE ,  Jeng-Hua WEI ,  Shan-Yi YANG ,  Yu-Chen HSIN

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1697 ,  H10B61/22 ,  H10N50/10 ,  H10N50/80

Abstract: A magnetic random access memory (MRAM) structure is provided. The MRAM structure includes a first write electrode, a first magnetic tunnel junction (MTJ) stack, a voltage control electrode, a second MTJ stack, and a second write electrode. The first MTJ stack includes a first free layer disposed on the first write electrode, a first tunnel barrier layer disposed on the first free layer, and a first fixed layer disposed on the first tunnel barrier layer. The voltage control electrode is disposed on the first MTJ stack. The second MTJ stack includes a second fixed layer disposed on the voltage control electrode, a second tunnel barrier layer disposed on the second fixed layer, and a second free layer disposed on the second tunnel barrier layer. The second write electrode is disposed on the second MTJ stack.