公开(公告)号：US20240186117A1

公开(公告)日：2024-06-06

申请号：US18409805

申请日：2024-01-11

Applicant: Industrial Technology Research Institute

Inventor： Hsuan-Fu Wang ,  Fu-Ching Tung ,  Ching-Chiun Wang

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45565 ,  H01J37/32899 ,  H01J37/32082 ,  H01J2237/332

Abstract: An atomic layer deposition apparatus including a chamber, a platform, a shower head, a bias power supply, a first injection device, and a second injection device is provided. The platform and the shower head are disposed in the chamber, and the platform is configured to carry a substrate having a high aspect ratio structure. The bias power supply is coupled to the platform. The first injection device and the second injection device are connected to the chamber; the first injection device injects a first precursor or a first inert gas into the chamber along a first direction through the shower head, and the second injection device injects a second precursor or a second inert gas into the chamber along a second direction perpendicular to the first direction. When the first precursor or the second precursor is injected into the chamber, the bias power supply is turned on. When the first inert gas or the second inert gas is injected into the chamber, the bias power supply is turned off.

公开(公告)号：US11850606B2

公开(公告)日：2023-12-26

申请号：US17106222

申请日：2020-11-30

Applicant: Industrial Technology Research Institute

Inventor： Fu-Ching Tung ,  Hsuan-Fu Wang ,  Jwu-Sheng Hu ,  Yung-Jen Cheng ,  Hung-Cheng Yen ,  Meng-Chun Chen

IPC: B04C5/26 ,  B04C9/00 ,  B01D47/10

CPC classification number: B04C9/00 ,  B01D47/10 ,  B04C5/26 ,  B04C2009/008

Abstract: A particles capturing system includes a venturi filter device, a cyclone filter device, a plurality of first nozzles and air to flow through the system. The venturi filter device has an air intake portion, a neck portion and an air outlet portion. The cyclone filter device, disposed in the air outlet portion, has an entrance and an exit. The plurality of first nozzles, disposed inside the venturi filter device, have a height greater than that of the the neck portion. When the air flows, the air enters the venturi filter device via an air inlet of the air intake portion, then orderly passes through the neck portion and the plurality of first nozzles, then enters the cyclone filter device via the entrance, and finally leaves the cyclone filter device via the exit, such that particles in the flowing air can be captured.

公开(公告)号：US11961716B2

公开(公告)日：2024-04-16

申请号：US17546053

申请日：2021-12-09

Applicant: Industrial Technology Research Institute

Inventor： Hsuan-Fu Wang ,  Fu-Ching Tung ,  Ching-Chiun Wang

IPC: C23C16/455 ,  H01J37/32

CPC classification number: H01J37/3244 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45565 ,  H01J37/32899 ,  H01J37/32082 ,  H01J2237/332

Abstract: A deposition method including following steps is provided. A first precursor is injected into a chamber along a first direction, and a bias power supply is turned on to attract the first precursor to a substrate. A second precursor is injected into the chamber along a second direction perpendicular to the first direction, and the bias power supply is turned on to attract the second precursor to the substrate. A first inert gas is injected into the chamber along the first direction, and the bias power supply is turned off to purge an unnecessary part of the first precursor or an unnecessary part of the second precursor or a by-product. A second inert gas is injected the chamber along the second direction, and the bias power supply is turned off to purge the unnecessary part of the first precursor or the unnecessary part of the second precursor or the by-products.

公开(公告)号：US20230187177A1

公开(公告)日：2023-06-15

申请号：US17546053

申请日：2021-12-09

Applicant: Industrial Technology Research Institute

Inventor： Hsuan-Fu Wang ,  Fu-Ching Tung ,  Ching-Chiun Wang

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/3244 ,  H01J37/32899 ,  C23C16/45565 ,  C23C16/45548 ,  C23C16/45536 ,  H01J37/32082 ,  H01J2237/332

Abstract: A deposition apparatus including a chamber, a platform, a shower head, a bias power supply, a first injection device, and a second injection device is provided. The platform and the shower head are disposed in the chamber, and the platform is configured to carry a substrate having a high aspect ratio structure. The bias power supply is coupled to the platform. The first injection device and the second injection device are connected to the chamber; the first injection device injects a first precursor or a first inert gas into the chamber along a first direction through the shower head, and the second injection device injects a second precursor or a second inert gas into the chamber along a second direction perpendicular to the first direction. When the first precursor or the second precursor is injected into the chamber, the bias power supply is turned on. When the first inert gas or the second inert gas is injected into the chamber, the bias power supply is turned off. A deposition method is also provided.