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    STRUCTURE OF RANDOM ACCESS MEMORY
    1.
    发明申请
    STRUCTURE OF RANDOM ACCESS MEMORY 审中-公开

    公开(公告)号：US20180211997A1

    公开(公告)日：2018-07-26

    申请号：US15453914

    申请日：2017-03-09

    Applicant: Industrial Technology Research Institute

    Inventor： Yu-De Lin ,  Heng-Yuan Lee

    IPC: H01L27/24 ,  H01L45/00

    CPC classification number: H01L27/2427 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/146

    Abstract: A structure of random access memory includes a memory cell and a selector. The memory cell has two different conductive states according to a bias applied on the memory cell. The selector is electrically connected to the memory cell in series. An operation voltage is applied between two end terminals of the memory cell and the selector connected in series. A structure of the selector formed from multiple capacitors coupled in series, includes a plurality of dielectric layers corresponding to the capacitors; and a metal conductive layer, disposed between the dielectric layers. A material of the metal conductive layer is to resist a material inter-diffusion between adjacent two of the dielectric layers in different materials.

    Ferroelectric memories
    2.
    发明授权
    Ferroelectric memories 有权

    公开(公告)号：US11217661B2

    公开(公告)日：2022-01-04

    申请号：US16842589

    申请日：2020-04-07

    Applicant: Industrial Technology Research Institute

    Inventor： Yu-De Lin ,  Heng-Yuan Lee ,  Po-Chun Yeh ,  Chih-Yao Wang ,  Hsin-Yun Yang

    IPC: H01L49/02 ,  H01L27/11502 ,  H01L27/11507 ,  G11C11/22

    Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a substrate, a first conductive layer disposed on the substrate, a patterned oxide layer disposed on the first conductive layer and the substrate, exposing a part of the first conductive layer, a second conductive layer disposed on the exposed first conductive layer and the patterned oxide layer, an antiferroelectric layer disposed on the exposed first conductive layer and the second conductive layer, a ferroelectric layer disposed on the second conductive layer and located on the antiferroelectric layer, a conductive oxide layer disposed between the antiferroelectric layer, and a third conductive layer disposed on the conductive oxide layer and between the ferroelectric layer.

    Ferroelectric memories
    3.
    发明授权
    Ferroelectric memories 有权

    公开(公告)号：US11017830B1

    公开(公告)日：2021-05-25

    申请号：US16907101

    申请日：2020-06-19

    Applicant: Industrial Technology Research Institute

    Inventor： Yu-De Lin ,  Heng-Yuan Lee ,  Po-Chun Yeh ,  Hsin-Yun Yang

    IPC: G11C11/22

    Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a first electrode layer having a dominant crystallographic orientation of (110) or (220), a second electrode layer opposite the first electrode layer, wherein the second electrode layer has a dominant crystallographic orientation of (110) or (220), and a ferroelectric layer disposed between the first electrode layer and the second electrode layer, wherein the ferroelectric layer has a dominant crystallographic orientation of (111).

    Ferroeolectric memories with ferroelectric composite layer
    6.
    发明授权
    Ferroeolectric memories with ferroelectric composite layer 有权

    公开(公告)号：US11856789B2

    公开(公告)日：2023-12-26

    申请号：US17368686

    申请日：2021-07-06

    Applicant: Industrial Technology Research Institute

    Inventor： Yu-De Lin ,  Po-Chun Yeh ,  Pei-Jer Tzeng

    IPC: H10B53/30 ,  G11C11/22

    CPC classification number: H10B53/30 ,  G11C11/22 ,  H01L2924/1441

    Abstract: A ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, a ferroelectric composite layer disposed between the first electrode and the second electrode, and a first insulating layer disposed on one side of the ferroelectric composite layer. The ferroelectric composite layer includes a first electrode layer, a second electrode layer, a ferroelectric layer and an antiferroelectric layer. The first electrode layer is opposite to the second electrode layer, and the ferroelectric layer and the antiferroelectric layer are disposed between the first electrode layer and the second electrode layer.

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