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公开(公告)号：US10141303B1
公开(公告)日：2018-11-27
申请号：US15709532
申请日：2017-09-20
Applicant: Infineon Technologies AG
Inventor： Timothy Canning , Bjoern Herrmann , Richard Wilson
IPC: H01L27/06 , H01L23/498 , H01L23/66 , H03F3/195 , H03F1/56
Abstract: An RF semiconductor amplifier package includes a flange shaped body section, an electrically conductive die pad centrally located on the body section, and an electrically insulating window frame disposed on an upper surface of the body section. A first electrically conductive lead is disposed on the window frame adjacent to a first side of the die pad and extends away from the first side of the die pad towards a first edge side of the body section. A second electrically conductive lead is disposed on the window frame adjacent to a second side of the die pad and extends away from the second side of the die pad towards a second edge side of the body section. A first electrically conductive biasing strip is disposed on the window frame, continuously connected to the second lead, and extends along and a third side of the die pad.
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公开(公告)号：US10320335B1
公开(公告)日：2019-06-11
申请号：US15962672
申请日：2018-04-25
Applicant: Infineon Technologies AG
Inventor： Haedong Jang , Bjoern Herrmann , Zulhazmi Mokhti , Richard Wilson
Abstract: An RF amplifier includes an amplifier chip on a flange having an input and an output comprising a parasitic capacitance and a parasitic inductance, a first chip capacitor coupled to the output of the output of the amplifier by a first plurality of bond wires, and a second chip capacitor coupled to the first chip capacitor by a second plurality of bond wires, and an output impedance matching network having an input coupled to the output of the second chip capacitor by a third plurality of bond wires, and an output, and a phase shift between the input and the output of less than 90 degrees, wherein the phase shift from the output of the amplifier chip to the output of the output impedance matching network is 180 degrees.
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公开(公告)号：US10236833B2
公开(公告)日：2019-03-19
申请号：US15667195
申请日：2017-08-02
Applicant: Infineon Technologies AG
Inventor： Bayaner Arigong , Richard Wilson , Haedong Jang , Frank Trang , Timothy Canning , Rongguo Zhou , Bjoern Herrmann
Abstract: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.
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公开(公告)号：US20190044483A1
公开(公告)日：2019-02-07
申请号：US15667195
申请日：2017-08-02
Applicant: Infineon Technologies AG
Inventor： Bayaner Arigong , Richard Wilson , Haedong Jang , Frank Trang , Timothy Canning , Rongguo Zhou , Bjoern Herrmann
Abstract: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.
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