公开(公告)号：US11295951B2

公开(公告)日：2022-04-05

申请号：US16374457

申请日：2019-04-03

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Gerald Rescher ,  Michael Stadtmueller

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/04 ,  H01L29/16 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10

Abstract: A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.

公开(公告)号：US20250107202A1

公开(公告)日：2025-03-27

申请号：US18882226

申请日：2024-09-11

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Hans Weber ,  Michael Hell ,  Wolfgang Bergner ,  Armin Tilke ,  Grazvydas Ziemys ,  Alexey Mikhaylov ,  Gerald Rescher

IPC: H01L29/40 ,  H01L29/16 ,  H01L29/423 ,  H01L29/51 ,  H01L29/78

Abstract: A transistor device is disclosed. The transistor device includes a semiconductor body and plurality of transistor cells. Each transistor cell includes: a drift region and a source region of a first doping type; a body region of a second doping type complementary to the first doping type; a field shaping region of the second doping type connected to a source node; and a gate electrode connected to a gate node. The gate electrode is arranged in a trench extending from a first surface into the semiconductor body. The gate electrode is dielectrically insulated from the body region by a gate dielectric. At least portions of the gate electrode are dielectrically insulated from the drift region by a field dielectric. The field shaping region adjoins the trench. The field dielectric comprises a high-k dielectric.

公开(公告)号：US20220157607A1

公开(公告)日：2022-05-19

申请号：US17666654

申请日：2022-02-08

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Gerald Rescher ,  Michael Stadtmueller

IPC: H01L21/04 ,  H01L21/02 ,  H01L29/16 ,  H01L29/78 ,  H01L29/66 ,  H01L29/40 ,  H01L29/10

Abstract: A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.

公开(公告)号：US20190311903A1

公开(公告)日：2019-10-10

申请号：US16374457

申请日：2019-04-03

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Gerald Rescher ,  Michael Stadtmueller

IPC: H01L21/04 ,  H01L21/02 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L29/40

Abstract: A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.