公开(公告)号：US20210391377A1

公开(公告)日：2021-12-16

申请号：US17345534

申请日：2021-06-11

Applicant: Infineon Technologies AG

Inventor： Alexander Frey ,  Bernhard Goller ,  Iris Moder ,  Ingo Muri ,  Alfred Sigl ,  Tobias Weindler

IPC: H01L27/146 ,  H01L23/544 ,  H01L21/304 ,  H01L29/78 ,  G01S17/894

Abstract: A method of manufacturing a semiconductor device is described. The method includes providing a semiconductor substrate. The semiconductor substrate includes a high-doped semiconductor substrate layer, a high-doped semiconductor device layer, and a low-doped semiconductor etch stop layer arranged between the high-doped semiconductor substrate layer and the high-doped semiconductor device layer. The high-doped semiconductor substrate layer is removed, wherein the removing includes dopant selective chemical etching stopping at the low-doped semiconductor etch stop layer. Further, the low-doped semiconductor etch stop layer is thinned to generate an exposed surface of the high-doped semiconductor device layer.