DISPLAY DEVICE
    1.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号:US20150372068A1

    公开(公告)日:2015-12-24

    申请号:US14739219

    申请日:2015-06-15

    Abstract: A display device includes a substrate, a thin film transistor unit disposed on the substrate, and a shielding unit disposed between the substrate and the thin film transistor unit. The thin film transistor unit includes a gate, an insulating layer, a semiconductor layer, a source, and a drain. The shielding unit includes a shielding layer and a first buffer layer. The first buffer layer is disposed between the shielding layer and the thin film transistor. Light with a wavelength of 200 nm to 510 nm has a transmittance between 0 to 15% when passing through the shielding layer.

    Abstract translation: 显示装置包括基板,设置在基板上的薄膜晶体管单元和设置在基板和薄膜晶体管单元之间的屏蔽单元。 薄膜晶体管单元包括栅极,绝缘层,半导体层,源极和漏极。 屏蔽单元包括屏蔽层和第一缓冲层。 第一缓冲层设置在屏蔽层和薄膜晶体管之间。 波长为200nm至510nm的光通过屏蔽层时的透光率为0至15%。

    DISPLAY PANEL
    2.
    发明申请
    DISPLAY PANEL 审中-公开
    显示面板

    公开(公告)号:US20160091742A1

    公开(公告)日:2016-03-31

    申请号:US14868096

    申请日:2015-09-28

    Abstract: A display panel comprises a first substrate, a second substrate and an organic planarization layer. The first substrate has an active area and a non-active area disposed adjacent to the active area. The second substrate is disposed opposite the first substrate. The organic planarization layer is disposed on the first substrate facing the second substrate and includes at least a first through portion which is disposed in the non-active area and exposes a film layer under the organic planarization layer.

    Abstract translation: 显示面板包括第一基板,第二基板和有机平坦化层。 第一衬底具有邻近有源区设置的有源区和非有源区。 第二基板与第一基板相对设置。 有机平坦化层设置在与第二基板相对的第一基板上,并且至少包括设置在非有源区域中的第一贯通部分,并且在有机平坦化层下方露出膜层。

    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE COMPRISING THE SAME
    3.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE COMPRISING THE SAME 有权
    薄膜晶体管基板和包括其的显示装置

    公开(公告)号:US20160111450A1

    公开(公告)日:2016-04-21

    申请号:US14873236

    申请日:2015-10-02

    Abstract: A thin-film transistor substrate is disclosed, which comprises a base layer; a semiconductor layer disposed on the base layer; a source electrode and a drain electrode disposed on the semiconductor layer; and a gate electrode disposed on the base layer and corresponding to the semiconductor layer; wherein the semiconductor layer includes a first region, a second region, and a third region, in which the first region corresponds to the gate electrode layer, the second region corresponds to the source electrode, and the third region corresponds to the drain electrode; and wherein the first region has a first thickness, the second region has a second thickness, and the third region has a third thickness, and the first thickness is greater than the second thickness or the third thickness.

    Abstract translation: 公开了一种薄膜晶体管衬底,其包括基极层; 设置在所述基底层上的半导体层; 设置在半导体层上的源电极和漏电极; 以及设置在所述基底层上并对应于所述半导体层的栅电极; 其中所述半导体层包括第一区域,第二区域和第三区域,其中所述第一区域对应于所述栅极电极层,所述第二区域对应于所述源极,并且所述第三区域对应于所述漏极电极; 并且其中所述第一区域具有第一厚度,所述第二区域具有第二厚度,并且所述第三区域具有第三厚度,并且所述第一厚度大于所述第二厚度或所述第三厚度。

    DISPLAY PANEL
    4.
    发明申请
    DISPLAY PANEL 审中-公开
    显示面板

    公开(公告)号:US20160049524A1

    公开(公告)日:2016-02-18

    申请号:US14793792

    申请日:2015-07-08

    Abstract: A display panel is disclosed, which comprises: a substrate; a thin film transistor unit disposed on the substrate, wherein the thin film transistor unit comprises a gate electrode and a semiconductor layer, wherein the semiconductor layer comprises a carrier channel region, and the gate electrode is disposed corresponding to the carrier channel region; a first metal oxide layer disposed on the semiconductor layer and covering the carrier channel region; and an isolation layer containing silicon oxide (SiOx) or aluminum oxide (Al2O3) disposed between the semiconductor layer and the first metal oxide layer; wherein the light transmittance of light with wavelength range from 210 nm to 350 nm through the first metal oxide layer is under or equal to 50%

    Abstract translation: 公开了一种显示面板,其包括:基板; 设置在所述基板上的薄膜晶体管单元,其中所述薄膜晶体管单元包括栅极电极和半导体层,其中所述半导体层包括载流子通道区域,并且所述栅电极对应于所述载流子通道区域设置; 设置在所述半导体层上并覆盖所述载流子通道区域的第一金属氧化物层; 以及设置在所述半导体层和所述第一金属氧化物层之间的包含氧化硅(SiO x)或氧化铝(Al 2 O 3)的隔离层; 其中通过所述第一金属氧化物层的波长为210nm至350nm的光的透光率为50%以下,

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