Abstract:
A display device includes a substrate, a thin film transistor unit disposed on the substrate, and a shielding unit disposed between the substrate and the thin film transistor unit. The thin film transistor unit includes a gate, an insulating layer, a semiconductor layer, a source, and a drain. The shielding unit includes a shielding layer and a first buffer layer. The first buffer layer is disposed between the shielding layer and the thin film transistor. Light with a wavelength of 200 nm to 510 nm has a transmittance between 0 to 15% when passing through the shielding layer.
Abstract:
A display panel comprises a first substrate, a second substrate and an organic planarization layer. The first substrate has an active area and a non-active area disposed adjacent to the active area. The second substrate is disposed opposite the first substrate. The organic planarization layer is disposed on the first substrate facing the second substrate and includes at least a first through portion which is disposed in the non-active area and exposes a film layer under the organic planarization layer.
Abstract:
A thin-film transistor substrate is disclosed, which comprises a base layer; a semiconductor layer disposed on the base layer; a source electrode and a drain electrode disposed on the semiconductor layer; and a gate electrode disposed on the base layer and corresponding to the semiconductor layer; wherein the semiconductor layer includes a first region, a second region, and a third region, in which the first region corresponds to the gate electrode layer, the second region corresponds to the source electrode, and the third region corresponds to the drain electrode; and wherein the first region has a first thickness, the second region has a second thickness, and the third region has a third thickness, and the first thickness is greater than the second thickness or the third thickness.
Abstract:
A display panel is disclosed, which comprises: a substrate; a thin film transistor unit disposed on the substrate, wherein the thin film transistor unit comprises a gate electrode and a semiconductor layer, wherein the semiconductor layer comprises a carrier channel region, and the gate electrode is disposed corresponding to the carrier channel region; a first metal oxide layer disposed on the semiconductor layer and covering the carrier channel region; and an isolation layer containing silicon oxide (SiOx) or aluminum oxide (Al2O3) disposed between the semiconductor layer and the first metal oxide layer; wherein the light transmittance of light with wavelength range from 210 nm to 350 nm through the first metal oxide layer is under or equal to 50%
Abstract translation:公开了一种显示面板,其包括:基板; 设置在所述基板上的薄膜晶体管单元,其中所述薄膜晶体管单元包括栅极电极和半导体层,其中所述半导体层包括载流子通道区域,并且所述栅电极对应于所述载流子通道区域设置; 设置在所述半导体层上并覆盖所述载流子通道区域的第一金属氧化物层; 以及设置在所述半导体层和所述第一金属氧化物层之间的包含氧化硅(SiO x)或氧化铝(Al 2 O 3)的隔离层; 其中通过所述第一金属氧化物层的波长为210nm至350nm的光的透光率为50%以下,