公开(公告)号：US20160093530A1

公开(公告)日：2016-03-31

申请号：US14499287

申请日：2014-09-29

Applicant: Innovative Micro Technology

Inventor： John C. HARLEY

IPC: H01L21/768 ,  B81C1/00

CPC classification number: H01L21/76898 ,  B81B7/0006 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2207/012 ,  B81B2207/015 ,  B81C1/00301 ,  B81C2203/0792 ,  H01L2224/02372 ,  H01L2224/05548

Abstract: A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate.

Abstract translation: 公开了一种在硅衬底中形成硅通孔（TSV）的方法。 该方法包括在硅衬底的第一侧中形成硅柱作为环状空间，从与环空的水平面相反的一侧去除材料，去除硅柱并用金属材料代替它，以通过延伸通过 基板的厚度。