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公开(公告)号：US20180354783A1
公开(公告)日：2018-12-13
申请号：US16107795
申请日：2018-08-21
发明人： Chang-Sheng Hsu , Chih-Fan Hu , Chia-Wei Lee , En Chan Chen , Shih-Wei Li
IPC分类号： B81C1/00
CPC分类号： B81C1/00246 , B81B2207/015 , B81B2207/07 , B81C2201/0176 , B81C2203/036 , B81C2203/0735
摘要： A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.
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公开(公告)号：US10071906B2
公开(公告)日：2018-09-11
申请号：US15281589
申请日：2016-09-30
申请人： INVENSENSE, INC.
CPC分类号： B81C1/00246 , B81B7/0025 , B81B7/007 , B81B2207/015 , B81C1/00531 , B81C1/00539 , B81C1/00801 , B81C2201/0132 , B81C2201/0133 , B81C2201/053 , B81C2203/0735
摘要： Systems and methods that protect CMOS layers from exposure to a release chemical are provided. The release chemical is utilized to release a micro-electro-mechanical (MEMS) device integrated with the CMOS wafer. Sidewalls of passivation openings created in a complementary metal-oxide-semiconductor (CMOS) wafer expose a dielectric layer of the CMOS wafer that can be damaged on contact with the release chemical. In one aspect, to protect the CMOS wafer and prevent exposure of the dielectric layer, the sidewalls of the passivation openings can be covered with a metal barrier layer that is resistant to the release chemical. Additionally or optionally, an insulating barrier layer can be deposited on the surface of the CMOS wafer to protect a passivation layer from exposure to the release chemical.
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公开(公告)号：US09967679B2
公开(公告)日：2018-05-08
申请号：US14613106
申请日：2015-02-03
发明人： Ulrich Krumbein , Alfons Dehe
IPC分类号： H04R23/00 , B81B7/02 , H04R17/02 , H04R19/00 , H04R19/04 , H04R31/00 , H04R19/01 , H04R19/02
CPC分类号： H04R23/00 , B81B7/02 , B81B2201/0257 , B81B2201/0278 , B81B2207/015 , H04R17/02 , H04R19/005 , H04R19/013 , H04R19/016 , H04R19/02 , H04R19/04 , H04R31/00 , H04R2201/003
摘要： According to embodiment, a transducer includes a microfabricated element integrated on a single die and an interface IC coupled to the microfabricated element. The microfabricated element includes an acoustic transducer and a temperature sensor, and the interface IC is electrically coupled to the acoustic transducer and the temperature sensor.
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公开(公告)号：US09938138B2
公开(公告)日：2018-04-10
申请号：US15436943
申请日：2017-02-20
发明人： Chun-Wen Cheng , Chia-Hua Chu
CPC分类号： B81C1/00158 , B81B7/008 , B81B2207/015 , B81B2207/096 , B81C1/00246 , B81C1/00333 , B81C1/00539 , B81C2201/0109 , B81C2201/0132 , B81C2203/0118 , B81C2203/0127 , B81C2203/0742 , B81C2203/0778 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/02247 , H01L21/02274 , H01L21/02337 , H01L21/0332 , H01L21/3081 , H01L21/31111 , H01L21/31144 , H01L21/76802
摘要： An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity through a via formed into the membrane layer.
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公开(公告)号：US09926192B2
公开(公告)日：2018-03-27
申请号：US14827214
申请日：2015-08-14
申请人： Invensense, Inc.
发明人： Cerina Zhang , Nim Tea
IPC分类号： H01L21/44 , B81C1/00 , H01L21/768 , H01L23/48 , B81B3/00
CPC分类号： B81C1/00984 , B81B3/0008 , B81B2207/015 , B81C1/00976 , B81C2201/115 , H01L21/76838 , H01L23/48 , H01L2924/0002 , H01L2924/00
摘要： A method of the invention includes reducing stiction of a MEMS device by providing a conductive path for electric charge collected on a bump stop formed on a substrate. The bump stop is formed by depositing and patterning a dielectric material on the substrate, and the conductive path is provided by a conductive layer deposited on the bump stop. The conductive layer can also be roughened to reduce stiction.
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公开(公告)号：US09908770B2
公开(公告)日：2018-03-06
申请号：US15317646
申请日：2015-05-29
申请人： Robert Bosch GmbH
发明人： David Bendes
CPC分类号： B81B7/0016 , B81B2203/0118 , B81B2203/053 , B81B2207/015 , B81C1/00682 , B81C2201/0171
摘要： A micromechanical structure is described, including: at least one elastically deformable first area, which includes a defined piezoelectrically doped second area, at least in sections; at least one fourth area, into which the electrical charges generated in the second area may be conducted; and at least one third area connected electrically to the second and fourth area, in which an electrical current flowing through is convertible into thermal energy.
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公开(公告)号：US09884757B2
公开(公告)日：2018-02-06
申请号：US14136199
申请日：2013-12-20
发明人： Bernhard Winkler , Rainer Leuschner , Horst Theuss
CPC分类号： B81B7/0058 , B81B2201/025 , B81B2201/0264 , B81B2207/012 , B81B2207/015 , B81C2203/0154 , G01L9/0054 , G01L15/00 , G01L19/141 , G01L19/148 , H01L29/84 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2924/1461 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Embodiments relate to sensor and sensing devices, systems and methods. In an embodiment, a micro-electromechanical system (MEMS) device comprises at least one sensor element; a framing element disposed around the at least one sensor element; at least one port defined by the framing element, the at least one port configured to expose at least a portion of the at least one sensor element to an ambient environment; and a thin layer disposed in the at least one port.
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公开(公告)号：US20170374442A1
公开(公告)日：2017-12-28
申请号：US15538584
申请日：2015-12-04
CPC分类号： H04R1/04 , B81B7/0061 , B81B2201/0257 , B81B2207/015 , B81C1/00309 , H04R1/2853 , H04R1/342 , H04R19/005 , H04R19/04 , H04R31/00 , H04R31/003 , H04R2201/003 , H04R2410/07
摘要： A MEMS transducer package (1) comprises a semiconductor die element (3) and a cap element (23). The semiconductor die element (3) and cap element (23) have mating surfaces (9, 21). The semiconductor die element (3) and cap element (23) are configured such that when the semiconductor die element (3) and cap element (4) are conjoined, a first volume (7, 27) is formed through the semiconductor die element (3) and into the semiconductor cap element (23), and an acoustic channel is formed to provide an opening between a non-mating surface (11) of the semiconductor die element (3) and a side surface (10, 12) of the transducer package.
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公开(公告)号：US20170374441A1
公开(公告)日：2017-12-28
申请号：US15538567
申请日：2015-12-04
CPC分类号： H04R1/04 , B81B7/0061 , B81B2201/0257 , B81B2207/015 , B81C1/00309 , H01L2224/16225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2924/10155 , H01L2924/10158 , H01L2924/16151 , H01L2924/16152 , H01L2924/16195 , H04R1/2853 , H04R1/342 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003 , H04R2410/07 , H01L2924/00014
摘要： A MEMS transducer package (1) comprises a semiconductor die element (3) and a cap element (23). The semiconductor die element (3) and cap element (23) have mating surfaces (9, 21). The semiconductor die element (3) and cap element (23) are configured such that when the semiconductor die element (3) and cap element (4) are conjoined, a first volume (7, 27) is formed through the semiconductor die element (3) and into the semiconductor cap element (23), and an acoustic channel is formed to provide an opening between a non-mating surface (11) of the semiconductor die element (3) and either a side surface (10, 12) of the transducer package or a non-mating surface (29) of the cap element (23).
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公开(公告)号：US20170355592A1
公开(公告)日：2017-12-14
申请号：US15689530
申请日：2017-08-29
发明人： Chien-Chang CHEN , Yi-Der LIANG , Shiao-Yi LIN , Cheng-Kuang YANG
CPC分类号： B81B3/0054 , B81B3/0078 , B81B2201/0257 , B81B2203/0118 , B81B2203/0127 , B81B2203/0307 , B81B2203/0361 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C2201/013 , B81C2201/053 , B81C2203/0714 , B81C2203/0735 , H04R19/005 , H04R19/04
摘要： The present invention disclosed a CMOS sensing component, a CMOS single chip and a method of manufacturing the same. The CMOS single chip comprises a movable film, at least one support pillar, a base metal layer and a circuit integration. The movable film is disposed on a top layer of the CMOS single chip and has a plurality of through-vias. The support pillar is disposed under the movable film to provide a supporting force of the movable film. The base metal layer is formed under the support pillars and isolated from the support pillars, and faces towards the movable film to form a micro capacitor to sense one of the outside sensing signals, the area of the base metal layer larger than the area of the movable film. The circuit integration is formed under the base metal layer, or formed under the base metal layer and on the side of the movable film, and connected to the movable film and the base metal layer, to provide operation voltages to the movable film and the base metal layer, and to receive the outside sensing signal generated sensed by the movable film and the base metal layer and convert the outside sensing signal into an output signal.
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