公开(公告)号：US20210096634A1

公开(公告)日：2021-04-01

申请号：US16586957

申请日：2019-09-28

Applicant: Intel Corporation

Inventor： Richard FASTOW ,  Shankar NATARAJAN ,  Chang Wan HA ,  Chee LAW ,  Khaled HASNAT ,  Chuan LIN ,  Shafqat AHMED

IPC: G06F1/3234 ,  G11C16/04 ,  G11C16/30 ,  G11C16/32 ,  G11C16/34

Abstract: A nonvolatile memory supports a standby state where the memory is ready to receive an access command to execute, and a deep power down state where the memory ignores all access commands. The memory can transition from the standby state to the deep power down state in response to a threshold amount of time in the standby state. Thus, the memory can enter the standby state after a command and then transition to the deep power down state after the threshold time.