公开(公告)号：US20200303381A1

公开(公告)日：2020-09-24

申请号：US16357221

申请日：2019-03-18

Applicant: Intel Corporation

Inventor： Elijah KARPOV ,  Brian DOYLE ,  Abhishek SHARMA ,  Prashant MAJHI ,  Pulkit JAIN

IPC: H01L27/11 ,  H01L49/02 ,  H05K1/18

Abstract: Embodiments herein describe techniques for a semiconductor device including a SRAM device having multiple SRAM memory cells, and a capacitor coupled to the SRAM device. The capacitor includes a first plate, a second plate, and a capacitor dielectric layer between the first plate and the second plate. The capacitor is to supply power to the multiple SRAM memory cells of the SRAM device in parallel for a period of time. Other embodiments may be described and/or claimed.