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公开(公告)号:US20200303381A1
公开(公告)日:2020-09-24
申请号:US16357221
申请日:2019-03-18
Applicant: Intel Corporation
Inventor: Elijah KARPOV , Brian DOYLE , Abhishek SHARMA , Prashant MAJHI , Pulkit JAIN
Abstract: Embodiments herein describe techniques for a semiconductor device including a SRAM device having multiple SRAM memory cells, and a capacitor coupled to the SRAM device. The capacitor includes a first plate, a second plate, and a capacitor dielectric layer between the first plate and the second plate. The capacitor is to supply power to the multiple SRAM memory cells of the SRAM device in parallel for a period of time. Other embodiments may be described and/or claimed.