公开(公告)号：US11152060B2

公开(公告)日：2021-10-19

申请号：US16449285

申请日：2019-06-21

Applicant: Intel Corporation

Inventor： Xiaofei Wang ,  Dinesh Somasekhar ,  Clifford Ong ,  Eric A Karl ,  Zheng Guo ,  Gordon Carskadon

IPC: G11C11/56 ,  G11C17/12 ,  H01L27/112

Abstract: Some embodiments include apparatuses having non-volatile memory cells, each of the non-volatile memory cells to store more than one bit of information; data lines, at most one of the data lines electrically coupled to each of the non-volatile memory cells; a circuit including transistors coupled to the data lines, the transistors including gates coupled to each other; and an encoder including input nodes and output nodes, the input nodes to receive input information from the data lines through the transistors, and the output nodes to provide output information having a value based on a value of the input information.