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公开(公告)号:US10936507B2
公开(公告)日:2021-03-02
申请号:US16367592
申请日:2019-03-28
Applicant: Intel Corporation
Inventor: Vivek Kozhikkottu , Esha Choukse , Shankar Ganesh Ramasubramanian , Melin Dadual , Suresh Chittor
IPC: G06F12/10 , G06F12/1009 , G06F16/907 , G06F9/54 , G06F12/0873 , G06F9/4401
Abstract: In one embodiment, an apparatus includes: a page table circuit to receive a virtual address and to generate at least a portion of a physical address therefrom; and a mapping rule table coupled to the page table circuit, the mapping rule table to receive mapping metadata of a page of a system memory and, based on the mapping metadata, output a mapping rule for the page. Other embodiments are described and claimed.
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公开(公告)号:US20200310979A1
公开(公告)日:2020-10-01
申请号:US16367592
申请日:2019-03-28
Applicant: Intel Corporation
Inventor: Vivek Kozhikkottu , Esha Choukse , Shankar Ganesh Ramasubramanian , Melin Dadual , Suresh Chittor
IPC: G06F12/1009 , G06F12/0873 , G06F16/907 , G06F9/54
Abstract: In one embodiment, an apparatus includes: a page table circuit to receive a virtual address and to generate at least a portion of a physical address therefrom; and a mapping rule table coupled to the page table circuit, the mapping rule table to receive mapping metadata of a page of a system memory and, based on the mapping metadata, output a mapping rule for the page. Other embodiments are described and claimed.
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公开(公告)号:US11216386B2
公开(公告)日:2022-01-04
申请号:US16584612
申请日:2019-09-26
Applicant: Intel Corporation
Inventor: Vivek Kozhikkottu , Suresh Chittor , Esha Choukse , Shankar Ganesh Ramasubramanian
Abstract: Techniques for setting a 2-level auto-close timer to access a memory device include examples of setting first and second time values for the 2-level auto-close timer to cause accessed rows to auto-close following a cache line access to a row of a bank of memory devices. For these examples, the cache line access is responsive to a multi-channel address interleaving policy that causes either successive or non-successive cache line accesses to the bank of memory devices.
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