公开(公告)号：US20180226478A1

公开(公告)日：2018-08-09

申请号：US15747719

申请日：2015-09-25

Applicant: Intel Corporation

Inventor： Aaron D. LILAK ,  Uygar E. AVCI ,  David L. KENCKE ,  Patrick MORROW ,  Kerryann FOLEY ,  Stephen M. CEA ,  Rishabh MEHANDRU

IPC: H01L29/417 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78

CPC classification number: H01L29/41791 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/785

Abstract: Techniques and mechanisms to provide insulation for a component of an integrated circuit device. In an embodiment, structures of a circuit component are formed in or on a first side of a semiconductor substrate, the structures including a first doped region, a second doped region and a third region between the first doped region and the second doped region. The substrate has formed therein an insulation structure, proximate to the circuit component structures, which is laterally constrained to extend only partially from a location under the circuit component toward an edge of the substrate. In another embodiment, a second side of the substrate—opposite the first side—is exposed by thinning to form the substrate from a wafer. Such thinning enables subsequent back side processing to form a recess in the second side, and to deposit the insulation structure in the recess.