Embedded bridge substrate having an integral device

    公开(公告)号:US11133256B2

    公开(公告)日:2021-09-28

    申请号:US16446920

    申请日:2019-06-20

    Abstract: Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate; a bridge, embedded in the package substrate, wherein the bridge includes an integral passive component, and wherein a surface of the bridge include first contacts in a first interconnect area and second contacts in a second interconnect area; a first die coupled to the passive component via the first contacts in the first interconnect area; and a second die coupled to the second contacts in the second interconnect area.

    EMBEDDED BRIDGE SUBSTRATE HAVING AN INTEGRAL DEVICE

    公开(公告)号:US20210335712A1

    公开(公告)日:2021-10-28

    申请号:US17371293

    申请日:2021-07-09

    Abstract: Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate; a bridge, embedded in the package substrate, wherein the bridge includes an integral passive component, and wherein a surface of the bridge include first contacts in a first interconnect area and second contacts in a second interconnect area; a first die coupled to the passive component via the first contacts in the first interconnect area; and a second die coupled to the second contacts in the second interconnect area.

    EMBEDDED BRIDGE SUBSTRATE HAVING AN INTEGRAL DEVICE

    公开(公告)号:US20190304915A1

    公开(公告)日:2019-10-03

    申请号:US16446920

    申请日:2019-06-20

    Abstract: Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate; a bridge, embedded in the package substrate, wherein the bridge includes an integral passive component, and wherein a surface of the bridge include first contacts in a first interconnect area and second contacts in a second interconnect area; a first die coupled to the passive component via the first contacts in the first interconnect area; and a second die coupled to the second contacts in the second interconnect area.

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