公开(公告)号：US10892406B2

公开(公告)日：2021-01-12

申请号：US15997628

申请日：2018-06-04

Applicant: Intel Corporation

Inventor： Stephen Russell ,  Andrea Gotti ,  Andrea Redaelli ,  Enrico Varesi ,  Innocenzo Tortorelli ,  Lorenzo Fratin ,  Alessandro Sebastiani

IPC: H01L45/00 ,  G11C13/00

Abstract: A phase change memory (PCM) cell can include a PCM layer. A first electrode and a second electrode disposed on opposite sides of the PCM layer. The first electrode, the second electrode, or both includes a metal ceramic composite material layer disposed between an upper barrier layer and a lower barrier layer and wherein the metal ceramic composite material layer provides a corresponding electrode with an electrical resistivity of from 10 mOhm-cm to 1000 mOhm-cm.

公开(公告)号：US20190044063A1

公开(公告)日：2019-02-07

申请号：US15942281

申请日：2018-03-30

Applicant: Intel Corporation

Inventor： Lorenzo Fratin ,  Russell L. Meyer ,  Fabio Pellizzer

IPC: H01L45/00

Abstract: A memory cell can include a chalcogenide material having a narrowed end. A conductive material can be positioned at the narrowed end of the chalcogenide material. A dielectric barrier layer can be disposed between the conductive material and the narrowed end of the chalcogenide material. A dielectric spacer material can be positioned along a narrowed segment of the chalcogenide material.

公开(公告)号：US20190044060A1

公开(公告)日：2019-02-07

申请号：US15997628

申请日：2018-06-04

Applicant: Intel Corporation

Inventor： Stephen W. Russell ,  Andrea Gotti ,  Andrea Redaelli ,  Enrico Varesi ,  Innocenzo Tortorelli ,  Lorenzo Fratin ,  Alessandro Sebastiani

IPC: H01L45/00 ,  G11C13/00

Abstract: A phase change memory (PCM) cell can include a PCM layer. A first electrode and a second electrode disposed on opposite sides of the PCM layer. The first electrode, the second electrode, or both includes a metal ceramic composite material layer disposed between an upper barrier layer and a lower barrier layer and wherein the metal ceramic composite material layer provides a corresponding electrode with an electrical resistivity of from 10 mOhm-cm to 1000 mOhm-cm.