公开(公告)号：US20230200081A1

公开(公告)日：2023-06-22

申请号：US17557119

申请日：2021-12-21

Applicant: Intel Corporation

Inventor： Arnab Sen Gupta ,  John J. Plombon ,  Dmitri E. Nikonov ,  Kevin P. O'Brien ,  Ian A. Young ,  Matthew V. Metz ,  Chia-Ching Lin ,  Scott B. Clendenning ,  Punyashloka Debashish ,  Carly Lorraine Rogan ,  Brandon Jay Holybee ,  Kaan Oguz

IPC: H01L27/11507

CPC classification number: H01L27/11507

Abstract: Described herein are integrated circuit devices formed using perovskite materials. Perovskite materials with a similar crystal structure and different electrical properties can be layered to realize a transistor or memory device. In some embodiments, a ferroelectric perovskite can be incorporated into a device with other perovskite films to form a ferroelectric memory device.