公开(公告)号：US20190102359A1

公开(公告)日：2019-04-04

申请号：US16147036

申请日：2018-09-28

Applicant: Intel Corporation

Inventor： Phil KNAG ,  Gregory K. CHEN ,  Raghavan KUMAR ,  Huseyin Ekin SUMBUL ,  Abhishek Sharma ,  Sasikanth Manipatruni ,  Amrita Mathuriya ,  Ram A. Krishnamurthy ,  Ian A. Young

IPC: G06F17/16 ,  G11C11/419 ,  G11C11/418 ,  G11C7/10 ,  G06F9/30 ,  G11C11/56

Abstract: A binary CIM circuit enables all memory cells in a memory array to be effectively accessible simultaneously for computation using fixed pulse widths on the wordlines and equal capacitance on the bitlines. The fixed pulse widths and equal capacitance ensure that a minimum voltage drop in the bitline represents one least significant bit (LSB) so that the bitline voltage swing remains safely within the maximum allowable range. The binary CIM circuit maximizes the effective memory bandwidth of a memory array for a given maximum voltage range of bitline voltage.