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公开(公告)号:US20200033736A1
公开(公告)日:2020-01-30
申请号:US16045253
申请日:2018-07-25
Applicant: Intel Corporation
Inventor: Robert BRISTOL , Guojing ZHANG , Tristan TRONIC , John MAGANA , Chang Ju CHOI , Arvind SUNDARAMURTHY , Richard SCHENKER
Abstract: Embodiments described herein comprise extreme ultraviolet (EUV) reticles and methods of forming EUV reticles. In an embodiment, the reticle may comprise a substrate and a mirror layer over the substrate. In an embodiment, the mirror layer comprises a plurality of alternating first mirror layers and second mirror layers. In an embodiment, a phase-shift layer is formed over the mirror layer. In an embodiment, openings for printable features and openings for non-printable features are formed into the phase-shift layer. In an embodiment, the non-printable features have a dimension that is smaller than a dimension of the printable features.
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公开(公告)号:US20200335434A1
公开(公告)日:2020-10-22
申请号:US16389672
申请日:2019-04-19
Applicant: Intel Corporation
Inventor: Marie KRYSAK , Kevin L. LIN , Robert BRISTOL , Charles H. WALLACE
IPC: H01L23/528 , H01L21/768 , H01L21/027
Abstract: Embodiments include a substrate and a method of forming the substrate. A substrate includes an interlayer dielectric and conductive traces in the interlayer dielectric (ILD). The conductive traces may include a first conductive trace surrounded by a second and third conductive traces. The substrate also includes a photoresist block in a region of the ILD. The region may be directly surrounded by the ILD and first conductive trace, and the photoresist block may be between the first conductive trace. The photoresist block may have a top surface that is substantially coplanar to top surfaces of the ILD and conductive traces. The photoresist block may have a width substantially equal to a width of the conductive traces. The photoresist block may be in the first conductive trace and between the second and third conductive traces. The photoresist block may include a metal oxide core embedded with organic ligands.
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