公开(公告)号：US20220344247A1

公开(公告)日：2022-10-27

申请号：US17862300

申请日：2022-07-11

Applicant: Intel Corporation

Inventor： Debendra MALLIK ,  Robert L. SANKMAN ,  Robert NICKERSON ,  Mitul MODI ,  Sanka GANESAN ,  Rajasekaran SWAMINATHAN ,  Omkar KARHADE ,  Shawna M. LIFF ,  Amruthavalli ALUR ,  Sri Chaitra J. CHAVALI

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00

Abstract: Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra-fine pitch (e.g., a pitch that is greater than or equal to 150 μm, etc.); (ii) a large die-to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.

公开(公告)号：US20230138543A1

公开(公告)日：2023-05-04

申请号：US18091982

申请日：2022-12-30

Applicant: Intel Corporation

Inventor： Debendra MALLIK ,  Robert L. SANKMAN ,  Robert NICKERSON ,  Mitul MODI ,  Sanka GANESAN ,  Rajasekaran SWAMINATHAN ,  Omkar KARHADE ,  Shawna M. LIFF ,  Amruthavalli ALUR ,  Sri Chaitra J. CHAVALI

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00

Abstract: Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra-fine pitch (e.g., a pitch that is greater than or equal to 150 μm, etc.); (ii) a large die-to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.

公开(公告)号：US20240030116A1

公开(公告)日：2024-01-25

申请号：US18375133

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Debendra MALLIK ,  Robert L. SANKMAN ,  Robert NICKERSON ,  Mitul MODI ,  Sanka GANESAN ,  Rajasekaran SWAMINATHAN ,  Omkar KARHADE ,  Shawna M. LIFF ,  Amruthavalli ALUR ,  Sri Chaitra J. CHAVALI

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00

CPC classification number: H01L23/49811 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/29

Abstract: Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra-fine pitch (e.g., a pitch that is greater than or equal to 150 μm, etc.); (ii) a large die-to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.

公开(公告)号：US20200273784A1

公开(公告)日：2020-08-27

申请号：US16646529

申请日：2017-12-30

Applicant: Intel Corporation

Inventor： Debendra MALLIK ,  Robert L. SANKMAN ,  Robert NICKERSON ,  Mitul MODI ,  Sanka GANESAN ,  Rajasekaran SWAMINATHAN ,  Omkar KARHADE ,  Shawna M. LIFF ,  Amruthavalli ALUR ,  Sri Chaitra J. CHAVALI

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00

Abstract: Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra fine pitch (e.g., a pitch that is greater than or equal to 150 μm, etc.); (ii) a large die to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.

公开(公告)号：US20200035658A1

公开(公告)日：2020-01-30

申请号：US16049696

申请日：2018-07-30

Applicant: Intel Corporation

Inventor： Kumar Abhishek SINGH ,  Zhaozhi LI ,  Thomas J. DEBONIS ,  Robert NICKERSON ,  Rees WINTERS

IPC: H01L25/18 ,  H01L23/31 ,  H01L21/56 ,  H01L25/00 ,  H01L21/48 ,  H01L23/544

Abstract: Embodiments disclosed herein include an electronics package. In an embodiment, the electronics package comprises a package substrate and a die on the package substrate. In an embodiment, a mold layer is positioned over the package substrate. In an embodiment, the electronics package further comprises through-mold interconnects through the mold layer, and a trench that extends at least partially into the mold layer.