公开(公告)号：US11018222B1

公开(公告)日：2021-05-25

申请号：US16728088

申请日：2019-12-27

Applicant: Intel Corporation

Inventor： Daniel B. O'Brien ,  Christopher J. Wiegand ,  Lukas M. Baumgartel ,  Oleg Golonzka ,  Dan S. Lavric ,  Daniel B. Bergstrom ,  Jeffrey S. Leib ,  Timothy Michael Duffy ,  Dax M. Crum

IPC: H01L29/06 ,  H01L23/00 ,  B82B1/00

Abstract: Disclosed herein are structures, methods, and assemblies related to metallization in integrated circuit (IC) structures. For example, in some embodiments, an IC structure may include a first nanowire in a metal region and a second nanowire in the metal region. A distance between the first nanowire and the second nanowire may be less than 5 nanometers, and the metal region may include tungsten between the first nanowire and the second nanowire.