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公开(公告)号：US10804460B2
公开(公告)日：2020-10-13
申请号：US16097801
申请日：2016-07-01
申请人： MD Tofizur Rahman , Christopher J. Wiegand , Brian Maertz , Daniel G. Ouellette , Kaan Oguz , Brian S. Doyle , Mark L. Doczy , Daniel B. Bergstrom , Justin S. Brockman , Oleg Golonzka , Tahir Ghani , Intel Corporation
发明人： MD Tofizur Rahman , Christopher J. Wiegand , Brian Maertz , Daniel G. Ouellette , Kevin P. O'Brien , Kaan Oguz , Brian S. Doyle , Mark L. Doczy , Daniel B. Bergstrom , Justin S. Brockman , Oleg Golonzka , Tahir Ghani
摘要： Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.
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公开(公告)号：US10020375B2
公开(公告)日：2018-07-10
申请号：US15726609
申请日：2017-10-06
申请人： Intel Corporation
IPC分类号： H01L29/49 , C23C14/06 , H01L21/28 , H01L21/8238 , H01L29/66 , H01L27/092 , H01L29/40 , H01L29/417 , H01L23/522 , H01L29/78
CPC分类号： H01L29/4966 , C22C30/00 , C23C14/0635 , C23C14/0652 , H01L21/28088 , H01L21/823821 , H01L21/823842 , H01L23/5226 , H01L27/0924 , H01L29/0653 , H01L29/401 , H01L29/41775 , H01L29/41791 , H01L29/456 , H01L29/517 , H01L29/66795 , H01L29/785
摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
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公开(公告)号：US20160035724A1
公开(公告)日：2016-02-04
申请号：US14860336
申请日：2015-09-21
申请人： INTEL CORPORATION
IPC分类号： H01L27/088 , H01L29/51 , C22C30/00 , H01L29/06 , C22C14/00 , C22C21/00 , H01L29/45 , H01L29/49
CPC分类号： H01L29/4966 , C22C30/00 , C23C14/0635 , C23C14/0652 , H01L21/28088 , H01L21/823821 , H01L21/823842 , H01L23/5226 , H01L27/0924 , H01L29/0653 , H01L29/401 , H01L29/41775 , H01L29/41791 , H01L29/456 , H01L29/517 , H01L29/66795 , H01L29/785
摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
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4.发明授权公开(公告)号：US10777421B2
公开(公告)日：2020-09-15
申请号：US15706992
申请日：2017-09-18
申请人： Intel Corporation
IPC分类号： H01L21/311 , H01L21/3065 , H01L29/06 , H01L21/762 , H01L29/66 , H01L21/324 , H01L21/8234 , H01L27/088 , H01L29/78
摘要： Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. Microelectronic devices including first and second fins that are laterally offset by a fin pitch to define a first field there between are also described. In embodiments the microelectronic devices include a conformal oxide layer and a conformal nitride layer on at least a portion of the first and second fins, where the conformal nitride layer is on at least a portion of the conformal oxide layer and a sacrificial oxide material is disposed within the first field.
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公开(公告)号：US09580776B2
公开(公告)日：2017-02-28
申请号：US14860341
申请日：2015-09-21
申请人： INTEL CORPORATION
IPC分类号： H01L29/78 , H01L27/088 , C22C30/00 , H01L29/45 , H01L29/51 , H01L29/49 , H01L29/06 , H01L21/8238 , H01L27/092
CPC分类号： H01L29/4966 , C22C30/00 , C23C14/0635 , C23C14/0652 , H01L21/28088 , H01L21/823821 , H01L21/823842 , H01L23/5226 , H01L27/0924 , H01L29/0653 , H01L29/401 , H01L29/41775 , H01L29/41791 , H01L29/456 , H01L29/517 , H01L29/66795 , H01L29/785
摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
摘要翻译： 本说明书涉及制造具有非平面晶体管的微电子器件的领域。 本说明书的实施例涉及在非平面NMOS晶体管内形成栅极，其中可将NMOS功能材料（例如铝，钛和碳的组成）与含钛栅极填充物结合使用 以便于在形成非平面NMOS晶体管栅极的栅电极时使用含钨导电材料。
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6.发明授权Additives to improve the performance of a precursor source for cobalt deposition 有权用于提高钴沉积前体源的性能的添加剂公开(公告)号：US09090964B2
公开(公告)日：2015-07-28
申请号：US14134087
申请日：2013-12-19
申请人： INTEL CORPORATION
CPC分类号： C23C16/18
摘要： Methods of forming cobalt films utilizing a cobalt precursor comprising an additive are described. Those methods may include adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule that is coupled with a deposition tool, and then forming a cobalt film using the cobalt precursor comprising the additive. Non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule.
摘要翻译： 描述了使用包含添加剂的钴前体形成钴膜的方法。 这些方法可以包括将添加剂添加到钴前体中，其中钴前体位于与沉积工具耦合的安瓿中，然后使用包含添加剂的钴前体形成钴膜。 钴前体的非挥发性分解产物溶解在安瓿中。
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公开(公告)号：US11094587B2
公开(公告)日：2021-08-17
申请号：US15570857
申请日：2015-06-03
申请人： Intel Corporation
发明人： Christopher J. Jezewski , Srijit Mukherjee , Daniel B. Bergstrom , Tejaswi K. Indukuri , Flavio Griggio , Ramanan V. Chebiam , James S. Clarke
IPC分类号： H01L23/48 , H01L21/4763 , H01L21/44 , H01L21/768 , H01L23/532 , H01L23/528 , H01L23/522
摘要： In one embodiment, a conductive connector for a microelectronic component may be formed with a noble metal layer, acting as an adhesion/wetting layer, disposed between a barrier liner and a conductive fill material. In a further embodiment, the conductive connector may have a noble metal conductive fill material disposed directly on the barrier liner. The use of a noble metal as an adhesion/wetting layer or as a conductive fill material may improve gapfill and adhesion, which may result in the conductive connector being substantially free of voids, thereby improving the electrical performance of the conductive connector relative to conductive connectors without a noble metal as the adhesion/wetting layer or the conductive fill material.
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公开(公告)号：US10651082B2
公开(公告)日：2020-05-12
申请号：US16081713
申请日：2016-03-31
申请人： Intel Corporation
IPC分类号： H01L21/768 , H01L23/532 , C23C16/34 , C23C16/455 , H01L21/285
摘要： In an example, there is disclosed a chemical compound, including a transition metal, a post-transition metal, a metalloid, and a nonmetal. By way of non-limiting example, the post-transition metal may be aluminum. The transition metal is selected from the group consisting of tungsten, tantalum, hafnium, molybdenum, niobium, zirconium, vanadium, and titanium. The metalloid may be boron or silicon. The nonmetal may be carbon or nitrogen. The compound may be used, for example, as a barrier material in an integrated circuit.
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9.发明申请公开(公告)号：US20180005841A1
公开(公告)日：2018-01-04
申请号：US15706992
申请日：2017-09-18
申请人： Intel Corporation
IPC分类号： H01L21/311 , H01L29/66 , H01L27/088 , H01L21/8234 , H01L21/324 , H01L29/78 , H01L21/3065
CPC分类号： H01L21/31116 , H01L21/3065 , H01L21/324 , H01L21/76229 , H01L21/823431 , H01L27/0886 , H01L29/0649 , H01L29/66795 , H01L29/7851
摘要： Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. By controlling the flow rate of various components of the plasma gas flow, plasmas exhibiting desired etching characteristics may be obtained. Such plasmas may be used in single or multistep etching operations, such as recess etching operations that may be used in the production of non-planar microelectronic devices.
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公开(公告)号：US20170117378A1
公开(公告)日：2017-04-27
申请号：US15401965
申请日：2017-01-09
申请人： Intel Corporation
IPC分类号： H01L29/49 , H01L29/66 , H01L29/40 , H01L27/092 , H01L29/417 , H01L23/522 , H01L21/28 , H01L21/8238 , H01L29/78 , C23C14/06
CPC分类号： H01L29/4966 , C22C30/00 , C23C14/0635 , C23C14/0652 , H01L21/28088 , H01L21/823821 , H01L21/823842 , H01L23/5226 , H01L27/0924 , H01L29/0653 , H01L29/401 , H01L29/41775 , H01L29/41791 , H01L29/456 , H01L29/517 , H01L29/66795 , H01L29/785
摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
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