CROSS DRAM DIMM SUB-CHANNEL PAIRING
    2.
    发明公开

    公开(公告)号:US20230215493A1

    公开(公告)日:2023-07-06

    申请号:US18120907

    申请日:2023-03-13

    CPC classification number: G11C11/4093 G11C11/4076 G11C5/06 G11C11/4096

    Abstract: Methods and apparatus for Cross DRAM DIMM sub-channel pairing. Memory channels on a memory controller or System on a Chip (SoC) are segmented into two subchannels, each including Command and Address (C/A) signals, DQ (data) lines. Under different solutions the two subchannels may share a command-bus clock or use separate command-bus clocks. Some approaches use subchannels from different memory channels to provide the C/A and DQ lines for two subchannels to a given DIMM. One solution implements an additional command-bus clock on the DIMM connector repurposing existing MCR pins to provide command-bus clock signals to a Registered Clock Driver (RCD) to allow the subchannels to be fully independent. Another solution is the pair every other DRAM controller to the same command-bus clock. Other solutions employ Skip-1, Skip-2, and Skip-3 configurations under which the clocks for the DDR-IO circuitry are not logically co-located with the subchannel IO circuitry.

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