公开(公告)号：US12139398B2

公开(公告)日：2024-11-12

申请号：US17950007

申请日：2022-09-21

Applicant: InvenSense, Inc.

Inventor： Weng Shen Su ,  CHung-Hsien Lin ,  Yaoching Wang ,  Tsung Lin Tang ,  Ting-Yuan Liu ,  Calin Miclaus

IPC: B81B3/00 ,  B81C1/00 ,  G01L9/00

Abstract: A method includes depositing a passivation layer on a substrate; depositing and patterning a first polysilicon layer on the passivation layer; depositing and patterning a first oxide layer on the first polysilicon layer forming a patterned first oxide layer; depositing and patterning a second polysilicon layer on the patterned first oxide layer. A portion of the second polysilicon layer directly contacts a portion of the first polysilicon layer. A portion of the patterned second polysilicon layer corresponds to a bottom electrode. A second oxide layer is deposited on the patterned second polysilicon layer and on an exposed portion of the patterned first oxide layer. A portion of the second oxide layer corresponding to a sensing cavity is etched, exposing the bottom electrode. Another substrate is bonded to the second oxide layer enclosing the sensing cavity. A top electrode is disposed within the another substrate and positioned over the bottom electrode.