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    Pressure sensor with high stability
    1.
    发明授权
    Pressure sensor with high stability 有权

    公开(公告)号：US12139398B2

    公开(公告)日：2024-11-12

    申请号：US17950007

    申请日：2022-09-21

    Applicant: InvenSense, Inc.

    Inventor： Weng Shen Su ,  CHung-Hsien Lin ,  Yaoching Wang ,  Tsung Lin Tang ,  Ting-Yuan Liu ,  Calin Miclaus

    IPC: B81B3/00 ,  B81C1/00 ,  G01L9/00

    Abstract: A method includes depositing a passivation layer on a substrate; depositing and patterning a first polysilicon layer on the passivation layer; depositing and patterning a first oxide layer on the first polysilicon layer forming a patterned first oxide layer; depositing and patterning a second polysilicon layer on the patterned first oxide layer. A portion of the second polysilicon layer directly contacts a portion of the first polysilicon layer. A portion of the patterned second polysilicon layer corresponds to a bottom electrode. A second oxide layer is deposited on the patterned second polysilicon layer and on an exposed portion of the patterned first oxide layer. A portion of the second oxide layer corresponding to a sensing cavity is etched, exposing the bottom electrode. Another substrate is bonded to the second oxide layer enclosing the sensing cavity. A top electrode is disposed within the another substrate and positioned over the bottom electrode.

    PRESSURE SENSOR WITH HIGH STABILITY
    4.
    发明申请
    PRESSURE SENSOR WITH HIGH STABILITY 有权

    公开(公告)号：US20230089813A1

    公开(公告)日：2023-03-23

    申请号：US17950007

    申请日：2022-09-21

    Applicant: InvenSense, Inc.

    Inventor： Weng Shen Su ,  Chung-Hsien Lin ,  Yaoching Wang ,  Tsung Lin Tang ,  Ting-Yuan Liu ,  Calin Miclaus

    IPC: B81C1/00 ,  G01L9/00 ,  B81B3/00

    Abstract: A method includes depositing a passivation layer on a substrate; depositing and patterning a first polysilicon layer on the passivation layer; depositing and patterning a first oxide layer on the first polysilicon layer forming a patterned first oxide layer; depositing and patterning a second polysilicon layer on the patterned first oxide layer. A portion of the second polysilicon layer directly contacts a portion of the first polysilicon layer. A portion of the patterned second polysilicon layer corresponds to a bottom electrode. A second oxide layer is deposited on the patterned second polysilicon layer and on an exposed portion of the patterned first oxide layer. A portion of the second oxide layer corresponding to a sensing cavity is etched, exposing the bottom electrode. Another substrate is bonded to the second oxide layer enclosing the sensing cavity. A top electrode is disposed within the another substrate and positioned over the bottom electrode.

    Deformable membrane and a compensating structure thereof
    7.
    发明授权
    Deformable membrane and a compensating structure thereof 有权

    公开(公告)号：US11027967B2

    公开(公告)日：2021-06-08

    申请号：US16108858

    申请日：2018-08-22

    Applicant: InvenSense, Inc.

    Inventor： Chung-Hsien Lin ,  Joseph Seeger ,  Calin Miclaus ,  Tsung Lin Tang ,  Pei-Wen Yen

    IPC: B81B3/00 ,  B81C1/00

    Abstract: A sensor includes a substrate, an electrode, a deformable membrane, and a compensating structure. The substrate includes a first side and a second side. The first side is opposite to the second side. The substrate comprises a cavity on the first side. The electrode is positioned at a bottom of the cavity on the first side of the substrate. The deformable membrane is positioned on the first side of the substrate. The deformable membrane encloses the cavity and deforms responsive to external stimuli. The compensation structure is connected to outer periphery of the deformable membrane. The compensation structure creates a bending force that is opposite to a bending force of the deformable membrane responsive to temperature changes and thermal coefficient mismatch.

    Pressure sensor
    8.
    发明授权
    Pressure sensor 有权

    公开(公告)号：US10816422B2

    公开(公告)日：2020-10-27

    申请号：US15442468

    申请日：2017-02-24

    Applicant: InvenSense, Inc.

    Inventor： Chung-Hsien Lin ,  Rene Hummel ,  Ulrich Bartsch ,  Marion Hermersdorf ,  Tsung Lin Tang ,  Wang Shen Su ,  Chia Min Lin

    IPC: G01L9/00 ,  G01L19/00 ,  G01L19/14 ,  B81B7/00 ,  B23P19/04 ,  G01L9/12

    Abstract: A pressure sensor comprises a first substrate and a cap attached to the first substrate. The cap includes a processing circuit, a cavity and a deformable membrane separating the cavity and a port open to an outside of the pressure sensor. Sensing means are provided for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit. The cap is attached to the first substrate such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port. The first substrate comprises a support portion the cap is attached to, a contact portion for electrically connecting the pressure sensor to an external device, and one or more suspension elements for suspending the support portion from the contact portion.

    Pressure sensor with deformable membrane and method of manufacture
    10.
    发明授权
    Pressure sensor with deformable membrane and method of manufacture 有权
    具有可变形膜的压力传感器及其制造方法

    公开(公告)号：US09581512B2

    公开(公告)日：2017-02-28

    申请号：US14522014

    申请日：2014-10-23

    Applicant: InvenSense, Inc.

    Inventor： Chung-Hsien Lin ,  Rene Hummel ,  Ulrich Bartsch ,  Marion Hermersdorf ,  Tsung Lin Tang ,  Wang Shen Su ,  Chia Min Lin

    IPC: G01L9/00 ,  G01L19/00 ,  B23P19/04 ,  G01L9/12 ,  G01L19/14 ,  B81B7/00

    CPC classification number: G01L9/0073 ,  B23P19/04 ,  B81B7/0051 ,  B81B7/0054 ,  B81B2201/0264 ,  B81B2207/012 ,  B81B2207/095 ,  B81C2203/0792 ,  G01L9/12 ,  G01L19/0084 ,  G01L19/145 ,  G01L19/146 ,  Y10T29/49165 ,  Y10T29/49904

    Abstract: A pressure sensor comprises a first substrate and a cap attached to the first substrate. The cap includes a processing circuit, a cavity and a deformable membrane separating the cavity and a port open to an outside of the pressure sensor. Sensing means are provided for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit. The cap is attached to the first substrate such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port. The first substrate comprises a support portion the cap is attached to, a contact portion for electrically connecting the pressure sensor to an external device, and one or more suspension elements for suspending the support portion from the contact portion.

    Abstract translation: 压力传感器包括第一基板和附接到第一基板的盖。 盖包括处理电路，空腔和分离空腔的可变形膜和通向压力传感器外部的端口。 提供感测装置，用于将可变形膜的响应转换成端口处的压力，使其成为能够被处理电路处理的信号。 盖子附接到第一基板，使得可变形膜面向第一基板，并且使得在可变形膜和第一基板之间提供间隙，该间隙有助于端口。 第一基板包括盖附接的支撑部分，用于将压力传感器电连接到外部装置的接触部分以及用于将支撑部分从接触部分悬挂的一个或多个悬挂元件。

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