公开(公告)号：US6153914A

公开(公告)日：2000-11-28

申请号：US170788

申请日：1998-10-13

申请人： Jacopo Mulatti ,  Stefano Zanardi ,  Carla Maria Golla ,  Armando Conci

发明人： Jacopo Mulatti ,  Stefano Zanardi ,  Carla Maria Golla ,  Armando Conci

IPC分类号： H01L21/8238 ,  H01L27/02 ,  H01L27/092 ,  H03K17/16 ,  H03K19/003 ,  H03K19/0175

CPC分类号： H01L27/0928 ,  H01L27/0251 ,  H03K17/162 ,  H03K19/00361 ,  Y10S257/901

摘要： An output circuit for an integrated circuit, includes a first transistor and a second transistor connected in series between a first external voltage and a second external voltage external to the integrated circuit, respectively through first and second electrical connecting paths. The first transistor is for carrying an output line of the integrated circuit to the first external voltage, while the second transistor is for carrying the external line of the integrated circuit to the second external voltage. The second transistor is formed inside a first well of a first conductivity type contained inside a second well of a second conductivity type formed in a substrate of the first conductivity type. The second well of the second conductivity type is connected to the first external voltage through a third electrical connecting path distinct from the first electrical connecting path.

摘要翻译： 用于集成电路的输出电路包括分别通过第一和第二电连接路径串联连接在集成电路外部的第一外部电压和第二外部电压之间的第一晶体管和第二晶体管。 第一晶体管用于将集成电路的输出线传送到第一外部电压，而第二晶体管用于将集成电路的外部线路传送到第二外部电压。 第二晶体管形成在形成在第一导电类型的衬底中的第二导电类型的第二阱内的第一导电类型的第一阱内。 第二导电类型的第二阱通过与第一电连接路径不同的第三电连接路径连接到第一外部电压。

公开(公告)号：US06055665A

公开(公告)日：2000-04-25

申请号：US816766

申请日：1997-03-18

申请人： Maurizio Branchetti ,  Armando Conci ,  Carla Golla

发明人： Maurizio Branchetti ,  Armando Conci ,  Carla Golla

IPC分类号： G06F11/10

CPC分类号： G06F11/1068

摘要： The invention relates to a method of recovering faulty non-volatile memories. This method can be applied to an electrically programmable semiconductor non-volatile memory device set up as a multi-sector memory matrix and including selection circuitry for selecting words or individual bytes of the memory. According to this method, the memory matrix is addressed by byte, rather than by memory word, by selection circuitry, whenever the device fails an operation test. The use of a Hamming code for error correction to remedy malfunctions due to manufacture allows the method to be applied to those devices which fail their test and would otherwise be treated as rejects.

摘要翻译： 本发明涉及一种恢复故障非易失性存储器的方法。 该方法可以应用于设置为多扇区存储器矩阵的电可编程半导体非易失性存储器件，并且包括用于选择存储器的字或单个字节的选择电路。 根据这种方法，无论何时设备操作测试失败，存储器矩阵都由字节寻址，而不是由存储器字进行寻址。 使用汉明码进行错误纠正来纠正由于制造造成的故障，可以将该方法应用于那些未经测试的设备，否则将被视为拒绝。