公开(公告)号：US20140176889A1

公开(公告)日：2014-06-26

申请号：US14192384

申请日：2014-02-27

Applicant: Panasonic Liquid Crystal Display Co., Ltd. ,  Japan Display Inc.

Inventor： Kimitoshi OUGIICHI ,  Hirotaka Imayama

IPC: G02F1/1333

CPC classification number: G02F1/133345 ,  G02F2001/134372

Abstract: A liquid crystal display device includes a pixel electrode, a common electrode, and an insulating layer which is formed between the pixel electrode and the common electrode. The pixel electrode or the common electrode includes at least one strip shaped portion which is extended in a first direction. A first thickness of the insulating layer between the pixel and common electrodes at a first portion extending from a vicinity of end of the at least one strip shaped portion in the first direction toward the end of the at least one strip shaped portion is thicker than a second thickness of the insulating layer between the pixel and the common electrodes at a second portion extending from the vicinity of end of the at least one strip shaped portion in the first direction toward a center of the at least one strip shaped portion.

Abstract translation: 液晶显示装置包括像素电极，公共电极和形成在像素电极和公共电极之间的绝缘层。 像素电极或公共电极包括沿第一方向延伸的至少一个条形部分。 在从第一方向的端部附近延伸的第一部分处的像素和公共电极之间的绝缘层的第一厚度朝向至少一个条形部分的端部的厚度比 在从第一方向的至少一个带状部分的端部附近延伸到至少一个带状部分的中心的第二部分处，在像素和公共电极之间的绝缘层的第二厚度。

公开(公告)号：US20150316805A1

公开(公告)日：2015-11-05

申请号：US14800056

申请日：2015-07-15

Applicant: Japan Display Inc.

Inventor： Masateru MORIMOTO ,  Takeshi SATO ,  Kimitoshi OUGIICHI

IPC: G02F1/133 ,  G02F1/1345 ,  G02F1/1368 ,  G02F1/1339

CPC classification number: G02F1/13306 ,  G02F1/1339 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133388 ,  H01L27/1248

Abstract: A thin-film transistor includes a gate electrode made of metal, a light transmissive gate insulating film that covers the gate electrode, a semiconductor film that overlaps with the gate electrode through the gate insulating film, and a source electrode and a drain electrode, made of metal, and spaced from each other. The gate electrode and the semiconductor film have respective through-holes communicated with each other so that the gate insulating film enters an inside of the through-holes. The gate insulating film has an area of the inside of the through-holes of the gate electrode and the semiconductor film. The source electrode and the drain electrode pass through the inside of the through-holes of the gate electrode and the semiconductor film so as to overlap with a part of the area of the inside of the through-hole of the gate insulating film and avoid a remaining portion thereof.

Abstract translation: 薄膜晶体管包括由金属制成的栅极电极，覆盖栅电极的透光栅极绝缘膜，通过栅极绝缘膜与栅电极重叠的半导体膜，以及源电极和漏电极 的金属，并且彼此间隔开。 栅极电极和半导体膜具有彼此连通的各个通孔，使得栅极绝缘膜进入通孔的内部。 栅极绝缘膜具有栅电极和半导体膜的通孔内部的面积。 源电极和漏电极通过栅电极和半导体膜的通孔的内部，以与栅极绝缘膜的通孔的内部的一部分区域重叠，并避免 剩余部分。

公开(公告)号：US20140160391A1

公开(公告)日：2014-06-12

申请号：US14095008

申请日：2013-12-03

Applicant: JAPAN DISPLAY INC.

Inventor： Masateru MORIMOTO ,  Takeshi SATOU ,  Kimitoshi OUGIICHI

IPC: G02F1/133 ,  G02F1/1368 ,  G02F1/1362

CPC classification number: G02F1/13306 ,  G02F1/1339 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133388 ,  H01L27/1248

Abstract: A thin-film transistor includes a gate electrode made of metal, a light transmissive gate insulating film that covers the gate electrode, a semiconductor film that overlaps with the gate electrode through the gate insulating film, and a source electrode and a drain electrode, made of metal, and spaced from each other. The gate electrode and the semiconductor film have respective through-holes communicated with each other so that the gate insulating film enters an inside of the through-holes. The gate insulating film has an area of the inside of the through-holes of the gate electrode and the semiconductor film. The source electrode and the drain electrode pass through the inside of the through-holes of the gate electrode and the semiconductor film so as to overlap with a part of the area of the inside of the through-hole of the gate insulating film and avoid a remaining portion thereof.

Abstract translation: 薄膜晶体管包括由金属制成的栅极电极，覆盖栅电极的透光栅极绝缘膜，通过栅极绝缘膜与栅电极重叠的半导体膜，以及源电极和漏电极 的金属，并且彼此间隔开。 栅极电极和半导体膜具有彼此连通的各个通孔，使得栅极绝缘膜进入通孔的内部。 栅极绝缘膜具有栅电极和半导体膜的通孔内部的面积。 源电极和漏电极通过栅电极和半导体膜的通孔的内部，以与栅极绝缘膜的通孔的内部的一部分区域重叠，并避免 剩余部分。