Abstract:
In an IPS mode liquid crystal display device, measures are taken against dark unevenness at the corner portion of a screen. The problem can be solved by a liquid crystal display device in which a comb tooth pixel electrode is formed on a common electrode formed in a flat surface through an interlayer insulating film; a TFT substrate is formed with a dummy pixel region and a display region surrounding the display region; a pixel on the display region is formed with a comb tooth display region pixel electrode bent in a projection in the first direction; and a pixel on the dummy pixel region is formed with a comb tooth dummy pixel region pixel electrode bent in a projection in a direction opposite to the first direction at an angle of 180 degrees.
Abstract:
The purpose of the invention is to suppress image persistence. The structure if the invention is as follows: A liquid crystal display device comprising: scanning lines extending in a first direction and arranged in a second direction, video signal lines arranged to cross the scanning lines, a pixel area is surrounded by the scanning lines and the video signal lines, a pixel electrode is formed in the pixel area, wherein conductive wirings are formed over the video signal lines via an organic insulating film in a plan view in the display area where images are displayed, a width in the first direction of the conductive wiring is bigger than a width in the first direction of the video signal line, an amount that the conductive wiring protrude the video signal line in a plan view is essentially the same in both side of the video signal line.
Abstract:
The purpose of the present invention is to supply a reference potential to a conductive film for shield formed on an outer major surface of the substrate without forming a voltage supply pad at the terminal area. An example of the concrete structure is: the liquid crystal display panel including a first substrate, on which wirings and pixels are formed, a first polarizing film adhered to the first substrate, a second substrate opposing to the first substrate, and a second polarizing plate adhered to the second substrate, the second substrate and the second polarizing plate being mutually adhered by a conductive adhesive, a back light including a metal component, the back light and the liquid crystal display panel being fixed by a conductive resin formed on a side surface of the metal component and a side surface of the liquid crystal display panel, the conductive resin electrically connecting with the conductive adhesive.
Abstract:
Reduction in the reliability of a seal portion is prevented. The reduction is caused by a light shielding portion formed on the seal portion of a TFT substrate to hamper curing an ultraviolet curable sealing material. A sealing material has a two-layer structure of an ultraviolet curable sealing material that is an inner sealing material and a thermosetting and ultraviolet curable sealing material or a thermosetting sealing material that is an outer sealing material. A light shielding portion is formed on a TFT substrate under the outer sealing material, and is not formed on the TFT substrate under the inner sealing material. When ultraviolet rays are applied from the TFT substrate side, the inner sealing material is cured in a short time. The outer sealing material is then cured by heating. Thus, the overall seal portion can be sufficiently cured, and a highly reliable seal portion can be formed.
Abstract:
According to one embodiment, a display device including, a display area and a non-display area, a first substrate, a second substrate arranged to be opposed to the first substrate, a sealant which bonds the first substrate and the second substrate, a liquid crystal layer held between the first substrate and the second substrate and sealed by the sealant, a trap electrode positioned at an inner side surrounded by the sealant and arranged in the non-display area, and a bank disposed between the sealant and the trap electrode.
Abstract:
A thin-film transistor includes a gate electrode made of metal, a light transmissive gate insulating film that covers the gate electrode, a semiconductor film that overlaps with the gate electrode through the gate insulating film, and a source electrode and a drain electrode, made of metal, and spaced from each other. The gate electrode and the semiconductor film have respective through-holes communicated with each other so that the gate insulating film enters an inside of the through-holes. The gate insulating film has an area of the inside of the through-holes of the gate electrode and the semiconductor film. The source electrode and the drain electrode pass through the inside of the through-holes of the gate electrode and the semiconductor film so as to overlap with a part of the area of the inside of the through-hole of the gate insulating film and avoid a remaining portion thereof.