公开(公告)号：US09869891B2

公开(公告)日：2018-01-16

申请号：US14800056

申请日：2015-07-15

Applicant: Japan Display Inc.

Inventor： Masateru Morimoto ,  Takeshi Sato ,  Kimitoshi Ougiichi

IPC: G02F1/1345 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1339 ,  H01L27/12 ,  G02F1/1333

CPC classification number: G02F1/13306 ,  G02F1/1339 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133388 ,  H01L27/1248

Abstract: A thin-film transistor includes a gate electrode made of metal, a light transmissive gate insulating film that covers the gate electrode, a semiconductor film that overlaps with the gate electrode through the gate insulating film, and a source electrode and a drain electrode, made of metal, and spaced from each other. The gate electrode and the semiconductor film have respective through-holes communicated with each other so that the gate insulating film enters an inside of the through-holes. The gate insulating film has an area of the inside of the through-holes of the gate electrode and the semiconductor film. The source electrode and the drain electrode pass through the inside of the through-holes of the gate electrode and the semiconductor film so as to overlap with a part of the area of the inside of the through-hole of the gate insulating film and avoid a remaining portion thereof.

公开(公告)号：US09116371B2

公开(公告)日：2015-08-25

申请号：US14095008

申请日：2013-12-03

Applicant: Japan Display Inc.

Inventor： Masateru Morimoto ,  Takeshi Sato ,  Kimitoshi Ougiichi

IPC: G02F1/1339 ,  G02F1/136 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1345 ,  G02F1/1333

CPC classification number: G02F1/13306 ,  G02F1/1339 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133388 ,  H01L27/1248

Abstract: A thin-film transistor includes a gate electrode made of metal, a light transmissive gate insulating film that covers the gate electrode, a semiconductor film that overlaps with the gate electrode through the gate insulating film, and a source electrode and a drain electrode, made of metal, and spaced from each other. The gate electrode and the semiconductor film have respective through-holes communicated with each other so that the gate insulating film enters an inside of the through-holes. The gate insulating film has an area of the inside of the through-holes of the gate electrode and the semiconductor film. The source electrode and the drain electrode pass through the inside of the through-holes of the gate electrode and the semiconductor film so as to overlap with a part of the area of the inside of the through-hole of the gate insulating film and avoid a remaining portion thereof.

Abstract translation: 薄膜晶体管包括由金属制成的栅极电极，覆盖栅电极的透光栅极绝缘膜，通过栅极绝缘膜与栅电极重叠的半导体膜，以及源电极和漏电极 的金属，并且彼此间隔开。 栅极电极和半导体膜具有彼此连通的各个通孔，使得栅极绝缘膜进入通孔的内部。 栅极绝缘膜具有栅电极和半导体膜的通孔内部的面积。 源电极和漏电极通过栅电极和半导体膜的通孔的内部，以与栅极绝缘膜的通孔的内部的一部分区域重叠，并避免 剩余部分。