公开(公告)号：US09869891B2

公开(公告)日：2018-01-16

申请号：US14800056

申请日：2015-07-15

Applicant: Japan Display Inc.

Inventor： Masateru Morimoto ,  Takeshi Sato ,  Kimitoshi Ougiichi

IPC: G02F1/1345 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1339 ,  H01L27/12 ,  G02F1/1333

CPC classification number: G02F1/13306 ,  G02F1/1339 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133388 ,  H01L27/1248

Abstract: A thin-film transistor includes a gate electrode made of metal, a light transmissive gate insulating film that covers the gate electrode, a semiconductor film that overlaps with the gate electrode through the gate insulating film, and a source electrode and a drain electrode, made of metal, and spaced from each other. The gate electrode and the semiconductor film have respective through-holes communicated with each other so that the gate insulating film enters an inside of the through-holes. The gate insulating film has an area of the inside of the through-holes of the gate electrode and the semiconductor film. The source electrode and the drain electrode pass through the inside of the through-holes of the gate electrode and the semiconductor film so as to overlap with a part of the area of the inside of the through-hole of the gate insulating film and avoid a remaining portion thereof.

公开(公告)号：US09372377B2

公开(公告)日：2016-06-21

申请号：US14464915

申请日：2014-08-21

Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Takeshi Sato ,  Hirotaka Imayama

IPC: G02F1/1337 ,  G02F1/1362 ,  G02F1/1343

CPC classification number: G02F1/136286 ,  G02F1/134336 ,  G02F1/134363 ,  G02F2001/134372 ,  G02F2201/40

Abstract: Gate lines are arranged in a first direction. Drain lines are arranged in a second direction. A first electrode has slits formed therein. Aperture regions surrounded by the drain lines and the gate lines include an aperture region including the slits having a first inclined angle and an aperture region including the slits having a second inclined angle, the second inclined angle being different from the first inclined angle. The aperture region including the slits having the first inclined angle and the aperture region including the slits having the second inclined angle are alternately formed in the first direction. Within the aperture regions arranged adjacent to each other in the first direction, a first region and a second region forming a pair by being arranged so as to be opposed to each other via one of the gate lines form one of pixels.

Abstract translation: 栅极线沿第一方向排列。 排水管线沿第二方向排列。 第一电极具有形成在其中的狭缝。 由漏极线和栅极线围绕的孔径区域包括包括具有第一倾斜角的狭缝的开口区域和包括具有第二倾斜角度的狭缝的开口区域，第二倾斜角度与第一倾斜角度不同。 包括具有第一倾斜角的狭缝的开口区域和包括具有第二倾斜角度的狭缝的开口区域在第一方向上交替地形成。 在沿第一方向彼此相邻布置的开口区域内，通过经由栅极线之一彼此相对布置而形成一对的第一区域和第二区域形成像素之一。

公开(公告)号：US09116371B2

公开(公告)日：2015-08-25

申请号：US14095008

申请日：2013-12-03

Applicant: Japan Display Inc.

Inventor： Masateru Morimoto ,  Takeshi Sato ,  Kimitoshi Ougiichi

IPC: G02F1/1339 ,  G02F1/136 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1345 ,  G02F1/1333

CPC classification number: G02F1/13306 ,  G02F1/1339 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133388 ,  H01L27/1248

Abstract: A thin-film transistor includes a gate electrode made of metal, a light transmissive gate insulating film that covers the gate electrode, a semiconductor film that overlaps with the gate electrode through the gate insulating film, and a source electrode and a drain electrode, made of metal, and spaced from each other. The gate electrode and the semiconductor film have respective through-holes communicated with each other so that the gate insulating film enters an inside of the through-holes. The gate insulating film has an area of the inside of the through-holes of the gate electrode and the semiconductor film. The source electrode and the drain electrode pass through the inside of the through-holes of the gate electrode and the semiconductor film so as to overlap with a part of the area of the inside of the through-hole of the gate insulating film and avoid a remaining portion thereof.

Abstract translation: 薄膜晶体管包括由金属制成的栅极电极，覆盖栅电极的透光栅极绝缘膜，通过栅极绝缘膜与栅电极重叠的半导体膜，以及源电极和漏电极 的金属，并且彼此间隔开。 栅极电极和半导体膜具有彼此连通的各个通孔，使得栅极绝缘膜进入通孔的内部。 栅极绝缘膜具有栅电极和半导体膜的通孔内部的面积。 源电极和漏电极通过栅电极和半导体膜的通孔的内部，以与栅极绝缘膜的通孔的内部的一部分区域重叠，并避免 剩余部分。

公开(公告)号：US10191336B2

公开(公告)日：2019-01-29

申请号：US15784505

申请日：2017-10-16

Applicant: Japan Display Inc.

Inventor： Masateru Morimoto ,  Michiaki Sakamoto ,  Takeshi Sato

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

Abstract: The purpose of the invention is to suppress image persistence. The structure if the invention is as follows: A liquid crystal display device comprising: scanning lines extending in a first direction and arranged in a second direction, video signal lines arranged to cross the scanning lines, a pixel area is surrounded by the scanning lines and the video signal lines, a pixel electrode is formed in the pixel area, wherein conductive wirings are formed over the video signal lines via an organic insulating film in a plan view in the display area where images are displayed, a width in the first direction of the conductive wiring is bigger than a width in the first direction of the video signal line, an amount that the conductive wiring protrude the video signal line in a plan view is essentially the same in both side of the video signal line.

公开(公告)号：US09653033B2

公开(公告)日：2017-05-16

申请号：US14789217

申请日：2015-07-01

Applicant: Japan Display Inc.

Inventor： Masahiro Kobayashi ,  Masateru Morimoto ,  Takeshi Sato

IPC: G09G3/36

CPC classification number: G09G3/3648 ,  G09G2300/0413 ,  G09G2300/0426 ,  G09G2300/0447

Abstract: In an IPS mode liquid crystal display device, measures are taken against dark unevenness at the corner portion of a screen. The problem can be solved by a liquid crystal display device in which a comb tooth pixel electrode is formed on a common electrode formed in a flat surface through an interlayer insulating film; a TFT substrate is formed with a dummy pixel region and a display region surrounding the display region; a pixel on the display region is formed with a comb tooth display region pixel electrode bent in a projection in the first direction; and a pixel on the dummy pixel region is formed with a comb tooth dummy pixel region pixel electrode bent in a projection in a direction opposite to the first direction at an angle of 180 degrees.

公开(公告)号：US09030639B2

公开(公告)日：2015-05-12

申请号：US14040985

申请日：2013-09-30

Applicant: Japan Display Inc.

Inventor： Masahiro Kobayashi ,  Takeshi Sato

IPC: G02F1/1339 ,  G02F1/1333

CPC classification number: G02F1/1341 ,  G02F1/1333 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1368 ,  G02F2001/13415 ,  G02F2202/025

Abstract: Reduction in the reliability of a seal portion is prevented. The reduction is caused by a light shielding portion formed on the seal portion of a TFT substrate to hamper curing an ultraviolet curable sealing material. A sealing material has a two-layer structure of an ultraviolet curable sealing material that is an inner sealing material and a thermosetting and ultraviolet curable sealing material or a thermosetting sealing material that is an outer sealing material. A light shielding portion is formed on a TFT substrate under the outer sealing material, and is not formed on the TFT substrate under the inner sealing material. When ultraviolet rays are applied from the TFT substrate side, the inner sealing material is cured in a short time. The outer sealing material is then cured by heating. Thus, the overall seal portion can be sufficiently cured, and a highly reliable seal portion can be formed.

Abstract translation: 防止了密封部的可靠性降低。 还原是由形成在TFT基板的密封部分上的遮光部分引起的，从而妨碍紫外线固化的密封材料的固化。 密封材料具有作为内部密封材料和热固性和紫外线固化型密封材料或作为外部密封材料的热固性密封材料的紫外线固化型密封材料的两层结构。 在外部密封材料下面的TFT基板上形成遮光部，不在内侧密封材料下的TFT基板上形成遮光部。 当从TFT基板侧施加紫外线时，内密封材料在短时间内固化。 然后通过加热固化外部密封材料。 因此，能够充分固化整体密封部，能够形成高可靠性的密封部。

公开(公告)号：US20140362320A1

公开(公告)日：2014-12-11

申请号：US14464915

申请日：2014-08-21

Applicant: Japan Display, Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Takeshi Sato ,  Hirotaka Imayama

IPC: G02F1/1362 ,  G02F1/1343

CPC classification number: G02F1/136286 ,  G02F1/134336 ,  G02F1/134363 ,  G02F2001/134372 ,  G02F2201/40

Abstract: Gate lines are arranged in a first direction. Drain lines are arranged in a second direction. A first electrode has slits formed therein. Aperture regions surrounded by the drain lines and the gate lines include an aperture region including the slits having a first inclined angle and an aperture region including the slits having a second inclined angle, the second inclined angle being different from the first inclined angle. The aperture region including the slits having the first inclined angle and the aperture region including the slits having the second inclined angle are alternately formed in the first direction. Within the aperture regions arranged adjacent to each other in the first direction, a first region and a second region forming a pair by being arranged so as to be opposed to each other via one of the gate lines form one of pixels.

Abstract translation: 栅极线沿第一方向排列。 排水管线沿第二方向排列。 第一电极具有形成在其中的狭缝。 由漏极线和栅极线包围的孔径区域包括包括具有第一倾斜角的狭缝的开口区域和包括具有第二倾斜角度的狭缝的开口区域，第二倾斜角度与第一倾斜角度不同。 包括具有第一倾斜角的狭缝的开口区域和包括具有第二倾斜角度的狭缝的开口区域在第一方向上交替地形成。 在沿第一方向彼此相邻布置的开口区域内，通过经由栅极线之一彼此相对布置而形成一对的第一区域和第二区域形成像素之一。

公开(公告)号：US10068932B2

公开(公告)日：2018-09-04

申请号：US14278358

申请日：2014-05-15

Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Yoshiaki Toyota

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/786

Abstract: A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

公开(公告)号：US20150212354A1

公开(公告)日：2015-07-30

申请号：US14680971

申请日：2015-04-07

Applicant: Japan Display Inc.

Inventor： Masahiro KOBAYASHI ,  Takeshi Sato

IPC: G02F1/1341 ,  G02F1/1335 ,  G02F1/1368

CPC classification number: G02F1/1341 ,  G02F1/1333 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1368 ,  G02F2001/13415 ,  G02F2202/025

Abstract: Reduction in the reliability of a seal portion is prevented. The reduction is caused by a light shielding portion formed on the seal portion of a TFT substrate to hamper curing an ultraviolet curable sealing material. A sealing material has a two-layer structure of an ultraviolet curable sealing material that is an inner sealing material and a thermosetting and ultraviolet curable sealing material or a thermosetting sealing material that is an outer sealing material. A light shielding portion is formed on a TFT substrate under the outer sealing material. The light shielding portion is not formed on the TFT substrate under the inner sealing material. When ultraviolet rays are applied from the TFT substrate side, the inner sealing material is cured in a short time. The outer sealing material is then cured by heating. Thus, the overall seal portion can be sufficiently cured, and a highly reliable seal portion can be formed.

Abstract translation: 防止了密封部的可靠性降低。 还原是由形成在TFT基板的密封部分上的遮光部分引起的，从而妨碍紫外线固化的密封材料的固化。 密封材料具有作为内部密封材料和热固性和紫外线固化型密封材料或作为外部密封材料的热固性密封材料的紫外线固化型密封材料的两层结构。 在外部密封材料下方的TFT基板上形成遮光部。 遮光部未形成在内侧密封材料下方的TFT基板上。 当从TFT基板侧施加紫外线时，内密封材料在短时间内固化。 然后通过加热固化外部密封材料。 因此，能够充分固化整体密封部，能够形成高可靠性的密封部。