MANUFACTURING METHOD FOR LIQUID CRYSTAL DISPLAY DEVICE

    公开(公告)号:US20230036779A1

    公开(公告)日:2023-02-02

    申请号:US17961617

    申请日:2022-10-07

    Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

    MANUFACTURING METHOD FOR LIQUID CRYSTAL DISPLAY DEVICE

    公开(公告)号:US20210181569A1

    公开(公告)日:2021-06-17

    申请号:US17187945

    申请日:2021-03-01

    Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

    LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20200225543A1

    公开(公告)日:2020-07-16

    申请号:US16828026

    申请日:2020-03-24

    Abstract: Disclosed is a manufacturing method of a liquid crystal display device which is a manufacturing method of a liquid crystal display device including a liquid crystal alignment film to which an alignment regulating force is imparted by a photo-alignment treatment, including: a film forming step of forming a film containing a polymer whose main chain is cleaved by irradiation with light; a photo-alignment step of imparting an alignment regulating force to the film formed in the film forming step by irradiation of the film with light in an atmosphere of a temperature lower than 100° C.; and a removing step of removing a low-molecular weight component generated by cleaving the main chain of the polymer through the light irradiation after the light irradiation. Also disclosed is a liquid crystal display device manufactured by the manufacturing method.

    LIQUID CRYSTAL DISPLAY DEVICE
    7.
    发明申请

    公开(公告)号:US20190227359A1

    公开(公告)日:2019-07-25

    申请号:US16373832

    申请日:2019-04-03

    CPC classification number: G02F1/1339 G02F1/133345 G02F2001/133388

    Abstract: A reliability of seal portion of a liquid crystal display device can be improved by the following structure. A liquid crystal display device includes: a TFT substrate which includes a display region and a terminal part, and has an inorganic insulating film formed on an organic passivation film and an alignment film formed over the inorganic insulating film; a counter substrate, the TFT substrate and the counter substrate bonded together by a sealing material formed at a seal part surrounding the display region; and a liquid crystal sealed inside. At the seal part, a transparent conductive oxide film is formed between the inorganic insulating film and the alignment film. The transparent conductive oxide film exists inside an edge of the TFT substrate and hence, the edge of the TFT substrate is free of the transparent conductive oxide film.

    SEMICONDUCTOR DEVICE
    8.
    发明公开

    公开(公告)号:US20230187558A1

    公开(公告)日:2023-06-15

    申请号:US18163045

    申请日:2023-02-01

    CPC classification number: H01L29/7869 H01L29/41733

    Abstract: A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.

    LIQUID CRYSTAL DISPLAY DEVICE
    10.
    发明申请

    公开(公告)号:US20170269405A1

    公开(公告)日:2017-09-21

    申请号:US15613561

    申请日:2017-06-05

    CPC classification number: G02F1/1339 G02F1/133345 G02F2001/133388

    Abstract: a reliability of seal portion of a liquid crystal display device can be improved by the following structure. A liquid crystal display device includes: a TFT substrate which includes a display region and a terminal part, and has an inorganic insulating film formed on an organic passivation film and an alignment film formed over the inorganic insulating film; a counter substrate, the TFT substrate and the counter substrate bonded together by a sealing material formed at a seal part surrounding the display region; and a liquid crystal sealed inside. At the seal part, a transparent conductive oxide film is formed between the inorganic insulating film and the alignment film. The transparent conductive oxide film exists inside an edge of the TFT substrate and hence, the edge of the TFT substrate is free of the transparent conductive oxide film.

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