SEMICONDUCTOR DEVICE
    2.
    发明申请

    公开(公告)号:US20240429321A1

    公开(公告)日:2024-12-26

    申请号:US18826548

    申请日:2024-09-06

    Abstract: A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.

    TACTILE DEVICE
    3.
    发明申请

    公开(公告)号:US20220203402A1

    公开(公告)日:2022-06-30

    申请号:US17655242

    申请日:2022-03-17

    Abstract: A tactile device includes: a substrate provided with a first surface; an organic piezoelectric film arranged on the first surface side; a plurality of electrodes arranged on the first surface; and a plurality of drive circuits arranged between the substrate and the organic piezoelectric film. The plurality of electrodes includes: a common electrode arranged across a plurality of cells; and a plurality of driving electrodes respectively arranged in the plurality of cells. The plurality of drive circuits includes: a first drive circuit capable of supplying a first driving signal; and a second drive circuit capable of supplying a second driving signal. The plurality of driving electrodes includes: a first driving electrode connected to the first drive circuit; and a second driving electrode connected to the second drive circuit. The first driving electrode and the second driving electrode are arranged in each of the plurality of cells.

    DISPLAY APPARATUS
    4.
    发明申请

    公开(公告)号:US20210397262A1

    公开(公告)日:2021-12-23

    申请号:US17446873

    申请日:2021-09-03

    Abstract: A display apparatus includes: a display panel; an enclosure enclosing the display panel; a cover member covering a front surface of the display panel; an actuator connected to the cover member and having a function of applying vibration to the cover member; and a viscous body arranged between the display panel and the cover member. The viscous body is bonded to the display panel and the cover member, and, when a periodic stress having a vibration frequency of ½ period per second is applied to the viscous body, a dynamic elastic modulus of the viscous body is equal to or lower than 1×10−3 of Young's modulus of the viscous body.

    DISPLAY DEVICE
    5.
    发明申请

    公开(公告)号:US20210341810A1

    公开(公告)日:2021-11-04

    申请号:US17372668

    申请日:2021-07-12

    Abstract: The purpose is to form images in a middle of a transparent media. Accordingly, the present invention has a structure as follows. A display device including: a plate shaped display medium, having a first major surface and a second major surface, disposed on the pedestal, in which the display medium includes the liquid crystal display panel, disposed in a first transparent medium of refractive index n1, first LEDs, which supply light to the liquid crystal display panel, are disposed in the pedestal, a second transparent medium of refractive index n2 exists between the first LEDs and the liquid crystal display panel, and n2>n1.

    SEMICONDUCTOR DEVICE
    6.
    发明公开

    公开(公告)号:US20230187558A1

    公开(公告)日:2023-06-15

    申请号:US18163045

    申请日:2023-02-01

    CPC classification number: H01L29/7869 H01L29/41733

    Abstract: A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.

    DISPLAY DEVICE
    7.
    发明申请

    公开(公告)号:US20170179206A1

    公开(公告)日:2017-06-22

    申请号:US15335942

    申请日:2016-10-27

    Abstract: In a display device, light emitting areas and colored areas each have a predetermined planar shape having no rotational symmetry so that rotation of the area by an angle greater than or equal to 0° but smaller than 360° does not produce an initial shape of the area and are so arranged as to have different types of rotation angle. The colored areas are grouped based on a set of the colored areas of colors different from one another to forma plurality of full-color pixels. The full-color pixels are so arranged that the rotation angle of the colored areas of the same color have different types. In the full-color pixels of the same type, the colored areas of the same color have the same rotation angle. In the full-color pixels of different types, the colored areas of the same color have different rotation angles.

    SEMICONDUCTOR DEVICE
    8.
    发明申请

    公开(公告)号:US20210091226A1

    公开(公告)日:2021-03-25

    申请号:US17111810

    申请日:2020-12-04

    Abstract: A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.

    DISPLAY DEVICE
    10.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号:US20160370931A1

    公开(公告)日:2016-12-22

    申请号:US15184572

    申请日:2016-06-16

    Abstract: According to one embodiment, a display device includes a first substrate including a scanning line, a control line, a control electrode, a signal line, a pixel electrode, a first switching element, and a second switching element. The first switching element includes a first semiconductor layer, a first gate electrode, and a first insulating film. The second switching element includes a second semiconductor layer, a second gate electrode, and a second insulating film. The control electrode is overlapped with the second gate electrode.

    Abstract translation: 根据一个实施例,显示装置包括包括扫描线,控制线,控制电极,信号线,像素电极,第一开关元件和第二开关元件的第一基板。 第一开关元件包括第一半导体层,第一栅电极和第一绝缘膜。 第二开关元件包括第二半导体层,第二栅电极和第二绝缘膜。 控制电极与第二栅电极重叠。

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