公开(公告)号：US20240429320A1

公开(公告)日：2024-12-26

申请号：US18824934

申请日：2024-09-05

Applicant: Japan Display Inc.

Inventor： Tatsuya TODA ,  Masashi TSUBUKU ,  Toshinari SASAKI

IPC: H01L29/786 ,  G01N23/20091 ,  H01L27/12

Abstract: A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.

公开(公告)号：US20220013668A1

公开(公告)日：2022-01-13

申请号：US17483836

申请日：2021-09-24

Applicant: Japan Display Inc.

Inventor： Tatsuya TODA ,  Masashi TSUBUKU ,  Toshinari SASAKI

IPC: H01L29/786 ,  H01L27/12 ,  G01N23/20091

Abstract: A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.

公开(公告)号：US20220004039A1

公开(公告)日：2022-01-06

申请号：US17447740

申请日：2021-09-15

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Takeshi SAKAI ,  Tatsuya TODA

IPC: G02F1/1368 ,  H01L27/32 ,  H01L51/56

Abstract: A display device comprising a transistor and a display element over the transistor, wherein the transistor includes a gate electrode on an insulating surface, a gate insulating layer on the gate electrode, and source/drain electrodes on the oxide semiconductor layer and the gate insulating layer, each including a first conductive layer containing nitrogen and a second conductive layer on the first conductive layer, and an insulating layer contains oxygen on the oxide semiconductor layer and the source/drain electrodes.

公开(公告)号：US20210210524A1

公开(公告)日：2021-07-08

申请号：US17209376

申请日：2021-03-23

Applicant: Japan Display Inc.

Inventor： Tatsuya TODA ,  Masashi TSUBUKU

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/45 ,  H01L29/786 ,  H01L21/02 ,  H01L21/4763 ,  H01L29/66

Abstract: To reduce degradation of characteristics and reliability of a transistor including an oxide semiconductor as an active layer. A thin film transistor comprising: an active layer formed of an oxide semiconductor including at least indium and gallium; an electrode layer including an aluminum layer and partially formed on the active layer; and an interlayer insulating layer formed on the active layer, wherein a peak value of chlorine concentration at an interface between the interlayer insulating layer and the active layer is equal to or less than 2.0×1019 [atoms/cm3], and a peak value of aluminum concentration at an interface between the interlayer insulating layer and the active layer is equal to or less than 1.0×1020 [atoms/cm3].

公开(公告)号：US20210013235A1

公开(公告)日：2021-01-14

申请号：US17031999

申请日：2020-09-25

Applicant: Japan Display Inc.

Inventor： Tatsuya TODA ,  Toshinari SASAKI ,  Masayoshi FUCHI

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1362 ,  G09G3/3266 ,  G09G3/3225

Abstract: A semiconductor device including: a first gate electrode; a first gate insulating layer on the first gate electrode; a first oxide semiconductor layer on the first insulating layer; source and drain electrodes connected to the first oxide semiconductor layer; a second gate insulating layer on the first oxide semiconductor layer; a second oxide semiconductor layer on the second gate insulating layer; a second gate electrode on the second oxide semiconductor layer, the second gate electrode being in contact with the second oxide semiconductor layer; a first insulating layer on the second gate electrode, the first insulating layer having a part of a first aperture overlapping with the second oxide semiconductor layer in a planar view; and a first connecting electrode electrically connecting the first gate electrode and the second gate electrode via the first aperture.

公开(公告)号：US20210202639A1

公开(公告)日：2021-07-01

申请号：US17199991

申请日：2021-03-12

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Tatsuya TODA

IPC: H01L27/32 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

Abstract: To sufficiently reduce an off-leakage current of a transistor including an oxide semiconductor as an active layer, provide a transistor having uniform characteristics when forming a large number of transistors on a large substrate, and reduce a load on a manufacturing process. A thin film transistor comprising: an active layer formed of an oxide semiconductor including at least indium and gallium; a gate electrode; a first gate insulating layer disposed between the active layer and the gate electrode on the gate electrode side; and a second gate insulating layer, which is a hydrogen block layer, disposed between the active layer and the gate electrode on the active layer side.

公开(公告)号：US20210151576A1

公开(公告)日：2021-05-20

申请号：US17162367

申请日：2021-01-29

Applicant: Japan Display Inc.

Inventor： Takeshi SAKAI ,  Tatsuya TODA ,  Masashi TSUBUKU

IPC: H01L29/45 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L21/443 ,  H01L21/4763 ,  H01L29/66

Abstract: A thin film transistor comprising an active layer made of an oxide semiconductor containing indium and gallium, an electrode layer including a titanium layer formed on the active layer, wherein an indium concentration is equal to or less than 1.3 times an oxygen concentration in a range of 15 nm from an interface between the active layer and the electrode layer toward the active layer.

公开(公告)号：US20210091226A1

公开(公告)日：2021-03-25

申请号：US17111810

申请日：2020-12-04

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Michiaki SAKAMOTO ,  Takashi OKADA ,  Toshiki KANEKO ,  Tatsuya TODA

IPC: H01L29/786 ,  H01L29/417

Abstract: A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.

公开(公告)号：US20250098321A1

公开(公告)日：2025-03-20

申请号：US18969433

申请日：2024-12-05

Applicant: Japan Display Inc.

Inventor： Tatsuya TODA ,  Toshinari SASAKI ,  Masayoshi FUCHI

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/3225 ,  G09G3/3266 ,  H10K59/12 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131

Abstract: A semiconductor device including: a first gate electrode; a first gate insulating layer on the first gate electrode; a first oxide semiconductor layer on the first insulating layer; source and drain electrodes connected to the first oxide semiconductor layer; a second gate insulating layer on the first oxide semiconductor layer; a second oxide semiconductor layer on the second gate insulating layer; a second gate electrode on the second oxide semiconductor layer, the second gate electrode being in contact with the second oxide semiconductor layer; a first insulating layer on the second gate electrode, the first insulating layer having a part of a first aperture overlapping with the second oxide semiconductor layer in a planar view; and a first connecting electrode electrically connecting the first gate electrode and the second gate electrode via the first aperture.

公开(公告)号：US20240429321A1

公开(公告)日：2024-12-26

申请号：US18826548

申请日：2024-09-06

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Michiaki SAKAMOTO ,  Takashi OKADA ,  Toshiki KANEKO ,  Tatsuya TODA

IPC: H01L29/786 ,  H01L29/417

Abstract: A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.