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公开(公告)号：US07977786B2
公开(公告)日：2011-07-12
申请号：US12180320
申请日：2008-07-25
申请人： Jeff A. Ridley , Max Glenn , James C. Nohava , Robert D. Horning , Jane Rekstad
发明人： Jeff A. Ridley , Max Glenn , James C. Nohava , Robert D. Horning , Jane Rekstad
CPC分类号： B81C1/00896 , B81B2207/07 , B81C2203/0118 , B81C2203/019
摘要： An improved MEMS device and method of making. Channels are formed in a first substrate around a plurality of MEMS device areas previously formed on the first substrate. Then, a plurality of seal rings are applied around the plurality of MEMS device areas and over at least a portion of the formed channels. A second substrate is attached to the first substrate, then the seal ring surrounded MEMS device areas are separated from each other. The channels include first and second cross-sectional areas. The first cross-sectional area is sized to keep saw debris particles from entering the MEMS device area.
摘要翻译： 改进的MEMS器件及其制造方法。 通道形成在第一基板周围围绕先前形成在第一基板上的多个MEMS器件区域。 然后，多个密封环被施加在多个MEMS器件区域周围并且在形成的通道的至少一部分上。 第二基板附接到第一基板，然后密封环包围的MEMS器件区域彼此分离。 通道包括第一和第二截面区域。 第一横截面面积的大小用于保持锯屑颗粒进入MEMS器件区域。
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公开(公告)号：US20100019364A1
公开(公告)日：2010-01-28
申请号：US12180320
申请日：2008-07-25
申请人： Jeff A. Ridley , Max Glenn , James C. Nohava , Robert D. Horning , Jane Rekstad
发明人： Jeff A. Ridley , Max Glenn , James C. Nohava , Robert D. Horning , Jane Rekstad
CPC分类号： B81C1/00896 , B81B2207/07 , B81C2203/0118 , B81C2203/019
摘要： An improved MEMS device and method of making. Channels are formed in a first substrate around a plurality of MEMS device areas previously formed on the first substrate. Then, a plurality of seal rings are applied around the plurality of MEMS device areas and over at least a portion of the formed channels. A second substrate is attached to the first substrate, then the seal ring surrounded MEMS device areas are separated from each other. The channels include first and second cross-sectional areas. The first cross-sectional area is sized to keep saw debris particles from entering the MEMS device area.
摘要翻译： 改进的MEMS器件及其制造方法。 通道形成在第一基板周围围绕先前形成在第一基板上的多个MEMS器件区域。 然后，多个密封环被施加在多个MEMS器件区域周围并且在形成的通道的至少一部分上。 第二基板附接到第一基板，然后密封环包围的MEMS器件区域彼此分离。 通道包括第一和第二截面区域。 第一横截面面积的大小用于保持锯屑颗粒进入MEMS器件区域。
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公开(公告)号：US06674777B1
公开(公告)日：2004-01-06
申请号：US09652555
申请日：2000-08-31
IPC分类号： H01S500
CPC分类号： H01S5/18313 , H01S5/0202 , H01S2301/176
摘要： Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished by etching a channel along the streets between die, followed by oxidizing the channel walls. The oxidation preferably oxidizes the aluminum bearing layers that are exposed by the channel walls inward for distance. Aluminum bearing layers, including AlAs and AlGaAs, may be oxidized to a stable native oxide that is resistant to further oxidation by the environment. After oxidation, the wafer can be cut along the channels into a number of die, each having a protective oxide layer on the side surfaces.
摘要翻译： 公开了用于密封或钝化诸如垂直腔表面发射激光器（VCSEL）的芯片的边缘的方法。 一种方法包括在将晶片切割成多个管芯之前，在晶片级处氧化管芯的边缘。 这可以通过沿模具之间的街道蚀刻通道，然后氧化通道壁来实现。 氧化优选氧化由通道壁向内暴露的距离的含铝层。 包括AlAs和AlGaAs的铝轴承层可以被氧化成稳定的天然氧化物，其耐受环境的进一步氧化。 氧化后，可以将晶片沿着通道切割成多个模具，每个模具在侧表面上具有保护性氧化物层。
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公开(公告)号：US06924161B2
公开(公告)日：2005-08-02
申请号：US10427237
申请日：2003-05-01
CPC分类号： H01S5/18313 , H01S5/0202 , H01S2301/176
摘要： Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished by etching a channel along the streets between die, followed by oxidizing the channel walls. The oxidation preferably oxidizes the aluminum bearing layers that are exposed by the channel walls inward for distance. Aluminum bearing layers, including AlAs and AlGaAs, may be oxidized to a stable native oxide that is resistant to further oxidation by the environment. After oxidation, the wafer can be cut along the channels into a number of die, each having a protective oxide layer on the side surfaces.
摘要翻译： 公开了用于密封或钝化诸如垂直腔表面发射激光器（VCSEL）的芯片的边缘的方法。 一种方法包括在将晶片切割成多个管芯之前，在晶片级处氧化管芯的边缘。 这可以通过沿模具之间的街道蚀刻通道，然后氧化通道壁来实现。 氧化优选氧化由通道壁向内暴露的距离的含铝层。 包括AlAs和AlGaAs的铝轴承层可以被氧化成稳定的天然氧化物，其耐受环境的进一步氧化。 氧化后，可以将晶片沿着通道切割成多个模具，每个模具在侧表面上具有保护性氧化物层。
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