公开(公告)号：US20150262791A1

公开(公告)日：2015-09-17

申请号：US14481951

申请日：2014-09-10

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Keisuke YAGAWA

IPC: H01J37/317 ,  H01J37/302 ,  H01J37/147 ,  H01J37/304

CPC classification number: H01J37/3174 ,  G03F1/36 ,  G03F1/78 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: An electron beam drawing method is an electron beam drawing method for manufacturing a lithography original plate in a variable shaped beam method. The electron beam drawing method includes extracting a hot spot in a circuit pattern layout of the lithography original plate at which a circuit pattern in the circuit pattern layout and a preset hot spot drawing pattern agree with each other. The electron beam drawing method further includes generating drawing data representing the circuit pattern layout with at least a part of the circuit pattern at the extracted hot spot replaced with a relieving drawing pattern. The electron beam drawing method further includes performing drawing on a resist applied to the substrate in the variable shaped beam method based on the drawing data.

Abstract translation: 电子束描绘法是用于制造可变形光束法中的光刻原版的电子束描绘方法。 电子束绘制方法包括在电路图案布局中的电路图案和预设热点绘制图案彼此一致的光刻原版板的电路图案布局中提取热点。 电子束描绘方法还包括：在提取的热点处的电路图案的至少一部分被替换为缓解图形，生成表示电路图案布局的绘图数据。 电子束描绘方法还包括基于绘图数据对可变形波束方法中施加到基底的抗蚀剂进行拉伸。

公开(公告)号：US20150060704A1

公开(公告)日：2015-03-05

申请号：US14453877

申请日：2014-08-07

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Keisuke YAGAWA

IPC: H01J37/317 ,  H01J37/304 ,  H01J37/302

CPC classification number: H01J37/3175 ,  H01J2237/31764 ,  H01J2237/31769 ,  H01J2237/31776

Abstract: According to one embodiment, a writing data correction method includes preparing a data table having a combination of a pattern resizing amount, a beam irradiation amount, and a back-scattering coefficient for each pattern size; converting, into writing data, a layout obtained by dividing a design layout into a plurality of regions in accordance with each pattern size, resizing patterns of the design layout writing based on the pattern resizing amounts corresponding to the pattern sizes contained in the respective regions, and executing a proximity effect correction for the resized patterns contained in the respective regions based on the beam irradiation amounts and the back-scattering coefficients corresponding to the pattern sizes of the design layout contained in the respective regions, and on the beam irradiation amounts and the back-scattering coefficients corresponding to the pattern sizes of the design layout contained in the regions adjacent to the respective regions.

Abstract translation: 根据一个实施例，一种写入数据校正方法包括：对每个图案尺寸准备具有图案调整量，光束照射量和背散射系数的组合的数据表; 将根据每个图案尺寸将设计布局分成多个区域而获得的布局转换为书写数据;基于与各个区域中包含的图案尺寸对应的图案调整大小来调整设计布局写入的尺寸大小; 并且基于与各个区域中包含的设计布局的图案尺寸对应的光束照射量和反向散射系数以及光束照射量和光束照射量，对包含在各个区域中的调整大小的图案执行邻近效应校正 对应于包含在与各个区域相邻的区域中的设计布局的图案尺寸的后向散射系数。