公开(公告)号：US10074515B2

公开(公告)日：2018-09-11

申请号：US15183130

申请日：2016-06-15

Applicant: NuFlare Technology, Inc.

Inventor： Munehiro Ogasawara

IPC: H01J37/30 ,  H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3174 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31776

Abstract: According to one aspect of the present invention, a charged particle beam lithography method includes forming, such that a shape identical to a first figure pattern obtained using a first charged particle beam having a first resolution can be obtained by superimposing a plurality of second figure patterns, said plurality of second figure patterns that have different widths and are obtained by using a second charged particle beam having a second resolution higher than the first resolution; and performing multiple writing of the plurality of second figure patterns, which are stacked, by using the second charged particle beam.

公开(公告)号：US10014256B2

公开(公告)日：2018-07-03

申请号：US15122396

申请日：2014-12-19

Applicant: Intel Corporation

Inventor： Donald W. Nelson ,  Yan A. Borodovsky ,  Mark C. Phillips

IPC: H01L23/48 ,  H01L23/528 ,  H01L21/027 ,  H01L21/311 ,  H01J37/04 ,  H01J37/317 ,  H01L21/768 ,  H01L27/02 ,  H01L27/11

CPC classification number: H01L23/5283 ,  H01J37/045 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/303 ,  H01J2237/30422 ,  H01J2237/30438 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01L21/0277 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76886 ,  H01L27/0207 ,  H01L27/11

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a layout for a metallization layer of an integrated circuit includes a first region having a plurality of unidirectional lines of a first width and a first pitch and parallel with a first direction. The layout also includes a second region having a plurality of unidirectional lines of a second width and a second pitch and parallel with the first direction, the second width and the second pitch different than the first width and the first pitch, respectively. The layout also includes a third region having a plurality of unidirectional lines of a third width and a third pitch and parallel with the first direction, the third width and the third pitch different than the first and second widths and different than the first and second pitches.

公开(公告)号：US09991089B2

公开(公告)日：2018-06-05

申请号：US15788338

申请日：2017-10-19

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Ingo Mueller ,  Nicole Rauwolf ,  Christof Riedesel ,  Thomas Kemen ,  Joerg Jacobi ,  Arne Thoma ,  Markus Doering ,  Dirk Zeidler ,  Juergen Kynast ,  Gerd Benner

IPC: H01J37/21 ,  H01J37/28 ,  H01J37/10

CPC classification number: H01J37/21 ,  H01J37/10 ,  H01J37/28 ,  H01J2237/0435 ,  H01J2237/0492 ,  H01J2237/28 ,  H01J2237/31764 ,  H01J2237/31774

Abstract: A method for operating a multi-beam particle optical unit comprises includes providing a first setting of effects of particle-optical components, wherein a particle-optical imaging is characterizable by at least two parameters. The method also includes determining a matrix A, and determining a matrix S. The method further includes defining values of parameters which characterize a desired imaging, and providing a second setting of the effects of the components in such a way that the particle-optical imaging is characterizable by the parameters having the defined values.

公开(公告)号：US09984853B2

公开(公告)日：2018-05-29

申请号：US14944718

申请日：2015-11-18

Applicant: NuFlare Technology, Inc.

Inventor： Shigehiro Hara ,  Kenichi Yasui ,  Yasuo Kato

IPC: H01J37/302

CPC classification number: H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31774

Abstract: A method for generating writing data to be input to a writing apparatus, which writes a figure pattern on a target object by using a charged particle beam, includes generating the writing data, based on a data format that sequentially defines figure information on a figure pattern, and dose information which is defined before or after the figure information and indicates one of a dose and a dose modulation rate for modulating a dose, for a position of each of corner points of the figure pattern.

公开(公告)号：US20180060474A1

公开(公告)日：2018-03-01

申请号：US15691951

申请日：2017-08-31

Applicant: NuFlare Technology, Inc.

Inventor： Shigehiro HARA ,  Kenichi YASUI

IPC: G06F17/50

CPC classification number: G06F17/5045 ,  G03F1/78 ,  G06K9/4604 ,  G06K9/4647 ,  G06K9/52 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31762 ,  H01J2237/31764

Abstract: In one embodiment, a generating method of drawing data includes generating a pixel map that includes dose amount information on each of pixels obtained by dividing a drawing area on an object into a mesh, extracting, from the pixel map, an island-shaped pixel map which is a group of multiple pixels in which the dose amount information is not zero, determining an order of definition of the dose amount information on the pixels in the island-shaped pixel map, and generating a compressed pixel map including a size of the pixels, information indicating the order of definition, coordinates of a pixel which is first in the order of definition in the island-shaped pixel map, and the dose amount information on the pixels in the island-shaped pixel map, the dose amount information being continuously defined based on the order of definition.

公开(公告)号：US09897908B2

公开(公告)日：2018-02-20

申请号：US15122400

申请日：2014-12-19

Applicant: Intel Corporation

Inventor： Yan A. Borodovsky ,  Donald W. Nelson ,  Mark C. Phillips

IPC: G03F1/20 ,  G03F7/20 ,  H01J37/30 ,  H01J37/04 ,  H01J37/317 ,  H01J37/302 ,  H01L21/768

CPC classification number: G03F1/20 ,  G03F7/203 ,  H01J37/045 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/303 ,  H01J2237/30422 ,  H01J2237/30438 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01L21/76802

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.

公开(公告)号：US09721756B2

公开(公告)日：2017-08-01

申请号：US14734306

申请日：2015-06-09

Applicant: NuFlare Technology, Inc.

Inventor： Hironobu Matsumoto

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3174 ,  H01J2237/31762 ,  H01J2237/31764

Abstract: A charged particle beam writing apparatus includes a storage unit to store writing data of a region to be written in a target object, a first dividing unit to read the writing data and divide the region to be written into at least one first data processing region that overlaps with at least a first region where a pattern has been arranged, and at least one second data processing region that overlaps with a second region where no pattern is arranged without overlapping with the first region, a data processing unit to perform data processing of predetermined data processing contents for at least one first data processing region without performing the data processing for at least one second data processing region, and a writing unit to write a pattern on the target object, based on processed data.

公开(公告)号：US09691589B2

公开(公告)日：2017-06-27

申请号：US13293393

申请日：2011-11-10

Applicant: Teunis Van De Peut ,  Marco Jan-Jaco Wieland

Inventor： Teunis Van De Peut ,  Marco Jan-Jaco Wieland

IPC: H01J37/302 ,  H01J37/04 ,  H01J37/317 ,  H01J37/30 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/20

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70475 ,  G06T1/20 ,  G06T1/60 ,  H01J37/045 ,  H01J37/3002 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/3175 ,  H01J2237/31761 ,  H01J2237/31764 ,  H04N1/405

Abstract: A method for exposing a wafer using a plurality of charged particle beamlets. The method comprises identifying non-functional beamlets among the beamlets, allocating a first subset of the beamlets for exposing a first portion of the wafer, the first subset excluding the identified non-functional beamlets, performing a first scan for exposing the first portion of the wafer using the first subset of the beamlets, allocating a second subset of the beamlets for exposing a second portion of the wafer, the second subset also excluding the identified non-functional beamlets, and performing a second scan for exposing the second portion of the wafer using the second subset of the beamlets, wherein the first and second portions of the wafer do not overlap and together comprise the complete area of the wafer to be exposed.

公开(公告)号：US20170076906A1

公开(公告)日：2017-03-16

申请号：US15122620

申请日：2014-12-19

Applicant: Intel Corporation

Inventor： Yan A. BORODOVSKY ,  Donald W. NELSON ,  Mark C. PHILLIPS

IPC: H01J37/04 ,  H01J37/317 ,  H01J37/20 ,  H01L21/027

CPC classification number: H01J37/3177 ,  H01J3/14 ,  H01J37/045 ,  H01J37/3026 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/303 ,  H01J2237/30422 ,  H01J2237/30438 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01L21/0277 ,  H01L21/31144

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. A scan direction of the BAA is along a second direction, orthogonal to the first direction.

Abstract translation: 描述适用于涉及补充电子束光刻（CEBL）的光刻设备和方法。 在一个示例中，用于电子束工具的消隐器孔径阵列（BAA）包括沿着第一方向的第一列开口并具有间距。 BAA还包括沿着第一方向的第二列开口并与第一列开口交错。 第二列开口具有间距。 BAA的扫描方向沿与第一方向垂直的第二方向。

公开(公告)号：US20170069509A1

公开(公告)日：2017-03-09

申请号：US15122398

申请日：2014-12-19

Applicant: Intel Corporation

Inventor： Donald W. NELSON ,  Yan A. BORODOVSKY ,  Mark C. PHILLIPS ,  Robert M. BIGWOOD

IPC: H01L21/311 ,  H01J37/317 ,  H01J37/04 ,  H01L21/027 ,  H01J37/302

CPC classification number: H01L21/31144 ,  G03F7/2059 ,  G03F7/7045 ,  H01J37/045 ,  H01J37/3026 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/303 ,  H01J2237/30422 ,  H01J2237/30438 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01L21/0277

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of data compression or data reduction for e-beam tool simplification involves providing an amount of data to write a column field and to adjust the column field for field edge placement error on a wafer, wherein the amount of data is limited to data for patterning approximately 10% or less of the column field. The method also involves performing e-beam writing on the wafer using the amount of data.

Abstract translation: 描述适用于涉及补充电子束光刻（CEBL）的光刻设备和方法。 在一个示例中，用于电子束工具简化的数据压缩或数据简化的方法包括提供一定量的数据来写入列字段并且调整用于晶片上的场边缘放置误差的列字段，其中数据量是 限于用于图案化的大约10％或更少的列场的数据。 该方法还涉及使用数据量在晶片上执行电子束写入。