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公开(公告)号：US20210082512A1
公开(公告)日：2021-03-18
申请号：US16808187
申请日：2020-03-03
Applicant: KIOXIA CORPORATION
Inventor： Kazuharu YAMABE , Qianqian XU
Abstract: A memory device includes a first cell above a substrate, a first line connected to the first cell, a second cell above the first cell connected with the first cell, a second line connected to the second cell, a third cell above the second cell connected with the second cell, a third line connected to the third cell, a fourth cell above the third cell connected with the third cell, a fourth line connected to the fourth cell, and a driver applying voltages to the lines when data is written to a cell in a write operation. To write data to the second cell, the driver applies a write voltage to the second line, applies a first voltage lower than the write voltage to the first line, and applies a second voltage higher than the first voltage and lower than the write voltage to the third and fourth lines.
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公开(公告)号：US20210264984A1
公开(公告)日：2021-08-26
申请号：US17315079
申请日：2021-05-07
Applicant: KIOXIA CORPORATION
Inventor： Kazuharu YAMABE , Qianqian XU
Abstract: A memory device includes a first cell above a substrate, a first line connected to the first cell, a second cell above the first cell connected with the first cell, a second line connected to the second cell, a third cell above the second cell connected with the second cell, a third line connected to the third cell, a fourth cell above the third cell connected with the third cell, a fourth line connected to the fourth cell, and a driver applying voltages to the lines when data is written to a cell in a write operation. To write data to the second cell, the driver applies a write voltage to the second line, applies a first voltage lower than the write voltage to the first line, and applies a second voltage higher than the first voltage and lower than the write voltage to the third and fourth lines.
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