公开(公告)号：US20220206382A1

公开(公告)日：2022-06-30

申请号：US17463435

申请日：2021-08-31

Applicant: KIOXIA CORPORATION

Inventor： Noriko SAKURAI ,  Takeharu MOTOKAWA ,  Ryu KOMATSU ,  Hideaki SAKURAI

IPC: G03F7/00 ,  G03F1/50 ,  G03F1/80

Abstract: According to one embodiment, a pattern formation method includes patterning a first film on a substate to have a plurality of lines extending in a first direction and a second pattern portion extending in a second direction intersecting the first direction. Each line having at least a first width and being spaced from an adjacent line in the second direction by a least three times the first width and spaced from ends of the lines in the first direction by twice or less the first width. A conformal film is then formed on the patterned first film. The conformal film having a thickness equal to the first width. The patterned first film is then removed while leaving portions of the conformal film that were previously on sidewalls of the plurality of lines behind.

公开(公告)号：US20210238739A1

公开(公告)日：2021-08-05

申请号：US17009388

申请日：2020-09-01

Applicant: KIOXIA CORPORATION

Inventor： Ryu KOMATSU ,  Takeharu MOTOKAWA ,  Noriko SAKURAI ,  Hideaki SAKURAI

IPC: C23C16/44 ,  H01J37/32 ,  C23C16/50 ,  G03F7/00

Abstract: According to one embodiment, a processing apparatus includes a chamber, a first gas introduction port that introduces a first gas into the chamber, a first gas discharge port that discharges the first gas from the chamber, and a stage that supports a processing object in the chamber. The processing apparatus has a plasma generating section with an electrode to generate a plasma in the chamber. The processing apparatus includes a shield at a first position that is between the plasma generating section and the stage. The shield is light transmissive, but blocks radicals and ions generated with plasma. In some examples, the shield may be moveable from the first position to another position that is not between the plasma generating section and the stage.

公开(公告)号：US20210291408A1

公开(公告)日：2021-09-23

申请号：US17115955

申请日：2020-12-09

Applicant: Kioxia Corporation

Inventor： Takeharu MOTOKAWA ,  Hideaki SAKURAI ,  Noriko SAKURAI ,  Ryu KOMATSU

IPC: B29C33/38 ,  G03F7/00

Abstract: A method of manufacturing a template, has: preparing a substrate containing quartz and having a surface, the surface including a protrusion and a depression; and processing the depression. The processing of the depression includes: a first step of forming a film on the surface, the film including a first region and a second region, the first region being provided on the protrusion, and the second region being provided on a bottom of the depression and being thinner than the first region; a second step of removing the second region with the first region partly remaining to expose the bottom of the depression; and a third step of processing the exposed part of the depression using a mask made of the remainder of the first region.

公开(公告)号：US20210088906A1

公开(公告)日：2021-03-25

申请号：US16817804

申请日：2020-03-13

Applicant: Kioxia Corporation

Inventor： Takeharu MOTOKAWA ,  Noriko SAKURAI ,  Ryu KOMATSU ,  Hideaki SAKURAI

IPC: G03F7/09 ,  G03F7/00 ,  G03F9/00

Abstract: According to one embodiment, a pattern forming method includes forming a resist film including a first core material pattern and a second core material pattern, on a first film laminated on a substrate; forming a second film at least on sidewalls of the first and second core material patterns; removing the first core material pattern while not removing the second core material pattern and the second film; and processing the first film by using, as a mask, the second core material pattern and the second film.

公开(公告)号：US20210080831A1

公开(公告)日：2021-03-18

申请号：US16804981

申请日：2020-02-28

Applicant: KIOXIA CORPORATION

Inventor： Ryu KOMATSU ,  Takeharu MOTOKAWA ,  Noriko SAKURAI ,  Hideaki SAKURAI

IPC: G03F7/20 ,  H01L21/027 ,  G03F7/16 ,  G03F7/38

Abstract: A method for processing a substrate includes forming a pattern on a substrate, supplying water to cover the pattern, and after the supplying the water, irradiating the pattern with light having a wavelength longer that which causes dissociation of water. A substrate processing apparatus of an embodiment includes a transfer chamber to receive a patterned substrate, a water supplying chamber to cover the pattern with water, and an irradiating chamber to irradiate a portion of the pattern with near-field light.