公开(公告)号：US20230298641A1

公开(公告)日：2023-09-21

申请号：US17896907

申请日：2022-08-26

Applicant: KIOXIA CORPORATION

Inventor： Shintaro HAYASHI ,  Mitsuhiro ABE ,  Naoaki KANAGAWA

IPC: G11C7/10 ,  G11C7/22

CPC classification number: G11C7/1063 ,  G11C7/1069 ,  G11C7/1096 ,  G11C7/222

Abstract: A semiconductor memory device includes a memory cell array, a storing unit that stores data read out from the memory cell array in storage circuits, an output circuit, and a control circuit. In response to a read request, the control circuit adjusts the value of a read pointer of the storing unit, controls the storing unit to sequentially output to the output circuit first and second data stored in first and second storage circuits of the storing unit, respectively, the read pointer having a first value that references the first storage circuit when the first data is output, and a second value that references the second storage circuit when the second data is output, and controls the output circuit to transmit the first and second data to the memory controller as dummy data, and thereafter to transmit at least third data to the memory controller as read data.