公开(公告)号：US20220085153A1

公开(公告)日：2022-03-17

申请号：US17196186

申请日：2021-03-09

Applicant: Kioxia Corporation

Inventor： Fuyuma ITO ,  Tatsuhiko KOIDE ,  Hiroki NAKAJIMA ,  Naomi YANAI ,  Tomohiko SUGITA ,  Hakuba KITAGAWA ,  Takaumi MORITA

IPC: H01L29/06 ,  H01L21/768 ,  H01L27/06 ,  H01L21/02

Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.

公开(公告)号：US20230307265A1

公开(公告)日：2023-09-28

申请号：US17898143

申请日：2022-08-29

Applicant: KIOXIA CORPORATION

Inventor： Takaumi MORITA ,  Hiroshi FUJITA ,  Tatsuhiko KOIDE ,  Naomi YANAI ,  Tsubasa WATANABE

IPC: H01L21/67

CPC classification number: H01L21/67086

Abstract: According to one embodiment, a substrate processing apparatus includes a processing tank configured to store a chemical solution for processing a substrate by immersion in a chemical solution. The substrate is held by a holding member during the processing. A lid is configured to open and close an upper end portion of the processing tank. The lid has a first bubble dispensing pipe formed or integrated therein. The first bubble dispensing pipe is configured to dispense a gas into the processing tank. A bottom surface side of the lid on a processing tank side may come into direct contact with the chemical solution in some examples. The first bubble dispensing pipe may dispense an inert gas into the chemical solution to improve process stability or the like.

公开(公告)号：US20220077183A1

公开(公告)日：2022-03-10

申请号：US17197305

申请日：2021-03-10

Applicant: Kioxia Corporation

Inventor： Takaumi MORITA ,  Hisashi OKUCHI ,  Keiichi SAWA ,  Hiroyuki YAMASHITA ,  Toshiaki YANASE ,  Tsubasa IMAMURA

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11565

Abstract: In one embodiment, a semiconductor device includes a substrate, and a plurality of electrode layers provided separately from each other in a first direction perpendicular to a surface of the substrate. The device further includes a first insulator, a charge storage layer, a second insulator, a first semiconductor region including silicon, and a second semiconductor region including silicon and carbon, which are provided in order on side faces of the electrode layers, wherein an interface between the first semiconductor region and the second insulator includes fluorine.