公开(公告)号：US20240087918A1

公开(公告)日：2024-03-14

申请号：US18458034

申请日：2023-08-29

Applicant: Kioxia Corporation

Inventor： Tomohiko SUGITA ,  Hiroshi FUJITA ,  Tatsuhiko KOIDE ,  Katsuhiro SATO

IPC: H01L21/67 ,  H01L21/311

CPC classification number: H01L21/67086 ,  H01L21/31111

Abstract: According to one embodiment, a substrate processing apparatus has a treatment tank, a holder to hold the substrate while in the treatment tank, a chemical discharge pipe below a position of the holder for supplying a chemical solution to the treatment tank, a bubble discharge pipe below the position of the holder for discharging a gas. The first bubble discharge pipe is closer along a horizontal direction to a centerline of the treatment tank than is the chemical discharge pipe. A rectifying plate is disposed below the position of the holder and extends from a position above the chemical discharge pipe to a position above the first bubble discharge pipe at an incline with respect to the first direction horizontal.

公开(公告)号：US20220406626A1

公开(公告)日：2022-12-22

申请号：US17682745

申请日：2022-02-28

Applicant: KIOXIA CORPORATION

Inventor： Tomohiko SUGITA ,  Hiroshi FUJITA ,  Tatsuhiko KOIDE

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/311

Abstract: According to one embodiment, a substrate processing device includes a processing tank to store a liquid and to permit a plurality of substrates to be immersed in the liquid at the same time. The device also has a holder member configured to hold the plurality of substrates while the substrates are immersed into and withdrawn from the liquid in the processing tank as well as a straightening vane configured to be positioned in the liquid above the plurality of substrates in the processing tank. The straightening vane includes vane portions extending in a vertical direction into the processing tank that have a length in the vertical direction that is greater than a cross sectional width in a horizontal direction perpendicular to the vertical direction. A bubble discharge pipe is disposed in the processing tank below the holder member. The bubble discharge pipe discharges gas into the liquid.

公开(公告)号：US20220085153A1

公开(公告)日：2022-03-17

申请号：US17196186

申请日：2021-03-09

Applicant: Kioxia Corporation

Inventor： Fuyuma ITO ,  Tatsuhiko KOIDE ,  Hiroki NAKAJIMA ,  Naomi YANAI ,  Tomohiko SUGITA ,  Hakuba KITAGAWA ,  Takaumi MORITA

IPC: H01L29/06 ,  H01L21/768 ,  H01L27/06 ,  H01L21/02

Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.

公开(公告)号：US20220181171A1

公开(公告)日：2022-06-09

申请号：US17680396

申请日：2022-02-25

Applicant: KIOXIA CORPORATION

Inventor： Yoshihiro UOZUMI ,  Shinsuke KIMURA ,  Yoshihiro OGAWA ,  Hiroyasu IIMORI ,  Tatsuhiko KOIDE ,  Hideaki HIRABAYASHI ,  Yuji NAGASHIMA

IPC: H01L21/67 ,  G03F7/40 ,  G03F7/16 ,  H01L21/677 ,  H01L21/68

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

公开(公告)号：US20240429075A1

公开(公告)日：2024-12-26

申请号：US18740873

申请日：2024-06-12

Applicant: Kioxia Corporation

Inventor： Ryo ITO ,  Hiroshi FUJITA ,  Tatsuhiko KOIDE

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/66

Abstract: A substrate processing apparatus according to an embodiment includes a processing tank configured to store a chemical and perform processing by immersing a substrate in the chemical, a holder configured to hold the substrate and having a lifting part, a chemical liquid supply device configured to supply the chemical, a light irradiation part configured to irradiate light to the substrate taken out from the processing tank, the substrate being taken out from the processing tank by the lifting part after immersing the substrate in the chemical, a light detection part configured to detect reflected light generated from the light being reflected by the substrate, and a control device configured to control an amount of chemical supplied by the chemical liquid supply device in response to a detection result of the light detection part.

公开(公告)号：US20230307265A1

公开(公告)日：2023-09-28

申请号：US17898143

申请日：2022-08-29

Applicant: KIOXIA CORPORATION

Inventor： Takaumi MORITA ,  Hiroshi FUJITA ,  Tatsuhiko KOIDE ,  Naomi YANAI ,  Tsubasa WATANABE

IPC: H01L21/67

CPC classification number: H01L21/67086

Abstract: According to one embodiment, a substrate processing apparatus includes a processing tank configured to store a chemical solution for processing a substrate by immersion in a chemical solution. The substrate is held by a holding member during the processing. A lid is configured to open and close an upper end portion of the processing tank. The lid has a first bubble dispensing pipe formed or integrated therein. The first bubble dispensing pipe is configured to dispense a gas into the processing tank. A bottom surface side of the lid on a processing tank side may come into direct contact with the chemical solution in some examples. The first bubble dispensing pipe may dispense an inert gas into the chemical solution to improve process stability or the like.

公开(公告)号：US20220310401A1

公开(公告)日：2022-09-29

申请号：US17466273

申请日：2021-09-03

Applicant: Kioxia Corporation

Inventor： Hakuba KITAGAWA ,  Tatsuhiko KOIDE ,  Hiroshi FUJITA

IPC: H01L21/311 ,  H01L21/306 ,  H01L21/3213 ,  C09K13/06

Abstract: According to one embodiment, a chemical solution comprises a mixed acid including an inorganic acid, an oxidizing agent, a carboxylic acid, and water; and polyethyleneimine of a concentration in the chemical solution in a range of 0.05 wt % to 10 wt %.