公开(公告)号：US20220093634A1

公开(公告)日：2022-03-24

申请号：US17189218

申请日：2021-03-01

Applicant: KIOXIA CORPORATION

Inventor： Akira TAKASHIMA ,  Tsunehiro INO ,  Yasushi NAKASAKI ,  Yoshihiko MORIYAMA

IPC: H01L27/11582 ,  H01L29/51

Abstract: According to one embodiment, a semiconductor memory device includes a stacked structure including conductive layers arranged in a first direction, and a columnar structure extending in the first direction in the first stacked structure. The columnar structure includes a semiconductor layer extending in the first direction, a charge storage layer between the semiconductor layer and the stacked structure, a first insulating layer between the semiconductor layer and the charge storage layer, and a second insulating layer between the stacked structure and the charge storage layer. The charge storage layer is aluminum nitride with a wurtzite crystal structure in which the c-axis is oriented in a direction towards the first insulating layer from the second insulating layer.